Low-temperature electrical characterization of the Ti-Si(100) interface at the p-Si/SiGe/Si-Ti structure using Hall measurement analysis

Arashti M.G.; Sadeghzadeh M.A.

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Low-temperature electrical characterization of the Ti-Si(100) interface at the p-Si/SiGe/Si-Ti structure using Hall measurement analysis

机译：使用霍尔测量分析对p-Si / SiGe / Si-Ti结构处的Ti-Si（100）界面进行低温电学表征

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Electrical characterization of a Ti-Si Schottky contact has been investigated using low-temperature Hall experiment analysis in the p-Si/SiGe/Si-Ti structure. In this approach, the density of a two-dimensional hole gas (2DHG) formed in the SiGe quantum well was a measure of charged metal-induced gap states. The Schottky barrier height (SBH) and the density of interface charges nint were evaluated via simulation of 2DHG density nh versus bias voltage applied to a Schottky gate. It was found that the density of interface charges depends on the position of the SiGe quantum well with respect to the Si-Ti interface irrespective of the bias voltage. Finally, the density of interface states was assessed via cap layer dependence of SBH and nint according to the mid-gap pinning model.

机译：使用p-Si / SiGe / Si-Ti结构中的低温霍尔实验分析研究了Ti-Si肖特基接触的电特性。在这种方法中，在SiGe量子阱中形成的二维空穴气体（2DHG）的密度是带电金属引起的间隙态的量度。肖特基势垒高度（SBH）和界面电荷密度nint通过2DHG密度nh对施加到肖特基栅极的偏置电压的仿真来评估。发现界面电荷的密度取决于SiGe量子阱相对于Si-Ti界面的位置，而不管偏压如何。最后，根据中间间隙钉扎模型，通过SBH和nint的覆盖层依赖性来评估界面态的密度。

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《Physica Scripta: An International Journal for Experimental and Theoretical Physics》 |2013年第2期|共6页
作者
Arashti M.G.; Sadeghzadeh M.A.;
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正文语种 eng
中图分类 53;
关键词
Low-temperature electrical; characterization; structure using Hall measurement;

机译：低温电气;特性;霍尔测量结构;

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1. Low-temperature electrical characterization of the Ti-Si(100) interface at the p-Si/SiGe/Si-Ti structure using Hall measurement analysis [J] . Arashti M.G., Sadeghzadeh M.A. Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2013,第2期

机译：使用霍尔测量分析对p-Si / SiGe / Si-Ti结构处的Ti-Si（100）界面进行低温电学表征
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Low-temperature electrical characterization of the Ti-Si(100) interface at the p-Si/SiGe/Si-Ti structure using Hall measurement analysis

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