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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation
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CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation

机译：紫外光下TIO2 / Al2O3异质结构的CO2气体检测特性

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摘要

Al/TiO2/p-Si and Al/TIO2/Al2O3/p-Si samples were prepared using the atomic layer deposition method (ALD) and their gas sensing properties were investigated. The electrical properties of the samples were studied using a two probe method in the temperature range 25-230 degrees C and at room temperature UV conditions. The TiO2/Al2O3 heterojunction sample exhibited an excellent gas sensing response to CO2 gas at room temperature and improved the effect of UV light irradiation. The results showed that heterostructures helped to improve the gas sensor properties, affected the sensing at room temperature and thus guided the design of photocatalysts. The TiO2/Al2O3 heterojunction prepared using this method can be used as a material for semiconductor gas sensors detecting poisonous gases like CO2 at room temperature with high sensitivity and selectivity.
机译：采用原子层沉积法制备了Al / TiO2 / p-Si和Al / TIO2 / Al2O3 / p-Si样品，并研究了它们的气敏特性。使用两探针法在25-230摄氏度的温度范围和室温UV条件下研究了样品的电性能。 TiO2 / Al2O3异质结样品在室温下对CO2气体表现出出色的气体感测响应，并改善了紫外线照射的效果。结果表明，异质结构有助于改善气体传感器的性能，影响室温下的传感，从而指导了光催化剂的设计。使用该方法制备的TiO2 / Al2O3异质结可以用作半导体气体传感器的材料，该传感器在室温下以高灵敏度和高选择性检测诸如CO2之类的有毒气体。

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