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Extended and revised analysis of singly ionized tin: Sn II

机译:扩展和修订的单电离锡分析:Sn II

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摘要

The electronic structure of singly ionized tin (Sn II) is partly a one-electron and partly a three-electron system with ground configuration 5s(2)5p. The excited configurations are of the type 5s(2)nl in the one-electron part, and 5s5p(2), 5p(3) and 5s5pnl (nl = 6s, 5d) in the three-electron system with quartet and doublet levels. The spectrum analyzed in this work was recorded on a 3 m normal incidence vacuum spectrograph of the Antigonish laboratory (Canada) in the wavelength region 300 angstrom-2080 angstrom using a triggered spark source.. The existing interpretation of the one-electron level system was confirmed in this paper, while the S-2(1/2) level of the 5s5p(2) configuration has been revised. The analysis has been extended to include new configurations 5p(3), 5s5p5d and 5s5p6s with the aid of superposition-of-configurations Hartree-Fock calculations with relativistic corrections. The ionization potential obtained from the ng series was found to be 118 023.7(7) cm(-1) (14.633 07(8) eV). We give a complete set of critically evaluated data on energy levels, observed wavelengths and transition probabilities of Sn II in the range 888-10 740 angstrom involving exication the n=5 electrons.
机译:单离子化锡(Sn II)的电子结构部分是单电子的,部分是接地结构为5s(2)5p的三电子系统。单电子部分的激发构型为5s(2)nl,三重电子和双峰态的三电子系统的激发构型为5s5p(2),5p(3)和5s5pnl(nl = 6s,5d)。在这项工作中分析的光谱记录在Antigonish实验室(加拿大)的3 m正入射真空光谱仪上,使用触发式火花源在300埃至2080埃的波长范围内。现有的单电子能级系统解释为在本文中得到确认,而5s5p(2)配置的S-2(1/2)级别已被修订。该分析已经扩展到包括新配置5p(3),5s5p5d和5s5p6s,借助相对论校正的配置叠加Hartree-Fock计算。从ng系列获得的电离电势为118 023.7(7)cm(-1)(14.633 07(8)eV)。我们给出了关于能级,观察到的波长和在888-10 740埃范围内激发n = 5个电子的Sn II的跃迁概率的一组经过严格评估的数据。

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