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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >The depth profiles of deuterium and hydrogen in graphite tiles exposed to DD plasma discharges of JT-60U
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The depth profiles of deuterium and hydrogen in graphite tiles exposed to DD plasma discharges of JT-60U

机译：暴露于JT-60U DD等离子体放电的石墨砖中氘和氢的深度分布

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Depth profiles of deuterium and hydrogen retained in plasma facing graphite tiles placed in the divertor region of JT-60U, and chemical bonding states of carbon on the surface of the tiles. were respectively investigated by SIMS and XPS. The deuterium in the near surface of all graphite tiles was replaced by hydrogen due to exposure to hydrogen plasma in the clean-tip stage after the D-D operation. The depth profiles of the H/C-12 and D/C-12 signal intensity ratios varied with the location of the tile. The integrated (H + D)/C-12 intensity ratio, Sigma(H + D)/C-12. in the outer divertor tile was the lowest at the strike point. and increased with the distance from the strike point. At the inner divertor tile with a thick re-deposition laver. Sigma(H + D)/C-12 was very low (values in the range of 0.01 similar to 0.07). After the removal of the re-deposition layer, the integrated ratios Sigma(H + D)/C-12 and SigmaD/C-12 increased by factors of 4 and 70. respectively. In the cases of the baffle plates and the dome top tiles, Sigma(H + D)/C-12 was higher. The intensity ratios. D/C-12 and H/C-12. were strongly influenced by the temperature of the tile. the existence of redeposition layers or eroded regions. and the fluxes of hydrogen isotope ions and charge exchange particles during the D-D operation. [References: 14]
机译：放置在JT-60U偏滤器区域中的面向等离子体的石墨砖中保留的氘和氢的深度分布以及砖表面上碳的化学键合状态。分别由SIMS和XPS进行了调查。在D-D操作后，由于在清洁尖端阶段暴露于氢等离子体中，所有石墨砖近表面中的氘被氢替代。 H / C-12和D / C-12信号强度比的深度曲线随瓷砖的位置而变化。积分（H + D）/ C-12强度比，Sigma（H + D）/ C-12。在外部分流器瓦处的最低点在打击点处。并且随着距罢工点距离的增加而增加。在内部分水器瓦上有厚重的沉积紫菜。 Sigma（H + D）/ C-12非常低（0.01的范围类似于0.07）。去除再沉积层后，积分比Sigma（H + D）/ C-12和SigmaD / C-12分别增加了4倍和70倍。在挡板和圆顶顶砖的情况下，Sigma（H + D）/ C-12更高。强度比。 D / C-12和H / C-12。受到瓷砖温度的强烈影响。再沉积层或侵蚀区域的存在。在D-D操作期间氢同位素离子和电荷交换粒子的通量。 [参考：14]

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