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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Effect of heat treatment on the electrical and thermoelectric properties of Sb doped Bi2Se3
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Effect of heat treatment on the electrical and thermoelectric properties of Sb doped Bi2Se3

机译：热处理对掺Sb的Bi2Se3的电和热电性能的影响

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Polycrystalline samples of (Bi0.95Sb0.05)(2)Se-3 were prepared using the conventional melting technique at 1273 K, followed by annealing at different temperatures (423, 473, 523 and 573 K) for different time intervals (4, 8, 12 and 16 h). The samples were crystallized in a single phase of Bi2Se3 and no other phases or impurities were observed. The electrical and thermoelectric properties were studied by measuring the electrical conductivity and Seebeck coefficient as functions of temperature in the range 100-400 K. The results exhibited a metal-n-type semiconductor transition for all samples. The power factor (Pf) was calculated to determine the effect of the annealing treatment on the performance of the prepared material as a thermoelectric power generator. The highest room temperature value of the Pf was 6.9 mu WK(-2)cm(-1) and was recorded for the sample annealed at 573 K for 16 h. The results confirm the feasibility of using the annealing process to improve the performance of thermoelectric materials.
机译：（Bi0.95Sb0.05）（2）Se-3的多晶样品采用常规熔化技术在1273 K下制备，然后在不同的温度（423、473、523和573 K）下以不同的时间间隔（4， 8、12和16小时）。样品在Bi2Se3单相中结晶，未观察到其他相或杂质。通过在100-400 K范围内测量电导率和塞贝克系数作为温度的函数，研究了电和热电性能。结果显示，所有样品均具有金属-n型半导体跃迁。计算功率因数（Pf），以确定退火处理对所制备的材料作为热电发生器的性能的影响。 Pf的最高室温值为6.9μWK（-2）cm（-1），并记录了在573 K下退火16小时的样品。结果证实了使用退火工艺改善热电材料性能的可行性。

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