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Strong and weak coupling of single quantum dot excitons in pillar microcavities

机译:柱微腔中单量子点激子的强弱耦合

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摘要

We report on strong as well as weak coupling of self assembled In0.30Ga0.70As quantum dots (QDs) in high-Q semiconductor micropillar cavities grown by molecular beam epitaxy. Using electron beam lithography and deep plasma etching, micropillars with high Q-factors (about 10000 for 1.6 mu m diameter) were realized. The low QD density in the present structures allows us to investigate the interaction of single QD excitons and the vacuum field of the microcavity by temperature tuning of exciton lines into resonance with the cavity mode. We will present an example where QD excitons with different emission energies show strong or weak coupling with the optical mode of the same micropillar at different resonance temperatures. Here, the individual coupling behaviour is described in terms of a different spatial position of the QDs relative to the field maximum of the cavity mode. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译:我们报告了通过分子束外延生长的高Q半导体微柱腔中自组装的In0.30Ga0.70As量子点(QDs)的强耦合和弱耦合。使用电子束光刻和深等离子体刻蚀,可以实现具有高Q因子(直径为1.6微米,约10000个)的微柱。当前结构中的低QD密度使我们能够通过将激子线温度调谐到谐振腔模式来研究单个QD激子与微腔真空场的相互作用。我们将举一个例子,其中具有不同发射能量的QD激子在不同的共振温度下与同一微柱的光学模式表现出强耦合或弱耦合。这里,根据QD相对于腔模的场最大值的不同空间位置来描述各个耦合行为。 (c)2006威尼海姆威利威世私人有限公司。

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