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首页> 外文期刊>Physica status solidi, B. Basic research >Rapid thermal annealing temperature dependence of noise properties in Au-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In02Ga08As wells
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Rapid thermal annealing temperature dependence of noise properties in Au-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In02Ga08As wells

机译：非对称In02Ga08As阱中嵌入InAs量子点的Au / n-GaAs肖特基二极管的噪声特性与热退火温度的快速相关性

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摘要

The effect of rapid thermal annealing temperature on the trapproperties of Au-GaAs Schottky diodes with embeddedInAs quantum dots in asymmetric In0.2Ga08As wells havebeen investigated by yapacitance–voltage (C–Ii) and low fre-quency noise (LEN) measurements in both reverse and for-ward bias regimes. The current noise spectra show behav-iour and generation–recombination (g–r) noise, attributed touniformly distributed traps in energy and to a discrete trap level in the energy band-gap of the GaAs capping layer, re-spectively. The experimental results show that the annealingtemperature is closely related with the level of these noisesources. The apparent doping concentrations, calculated fromthe C– characteristics, indicate that the density of trappingstates near the buffer layer interface is increased as the an-nealing temperature increases.
机译：快速热退火温度对不对称In0.2Ga08As阱中嵌入InAs量子点的Au / n-GaAs肖特基二极管的俘获性能的影响已通过电容电压（C–Ii）和低频噪声（LEN）的测量进行了研究。反向和向前偏见制度。当前的噪声频谱显示出行为和生成重组（gr）噪声，分别归因于能量的均匀分布陷阱和GaAs覆盖层的能带隙中的离散陷阱能级。实验结果表明，退火温度与这些噪声源的水平密切相关。根据C–特性计算得出的表观掺杂浓度表明，随着退火温度的升高，缓冲层界面附近的陷阱态密度也随之增加。

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