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首页> 外文期刊>Physica status solidi, B. Basic research >Synthesis and characterization of core-shell ZnO/ZnSe nanowires grown by MOCVD
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Synthesis and characterization of core-shell ZnO/ZnSe nanowires grown by MOCVD

机译：MOCVD法制备核壳型ZnO / ZnSe纳米线的合成与表征

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ZnO/ZnSe core/shell nanowire arrays have been grown by metal-organic chemical vapor deposition on c-plane sapphire. The morphology and the structure of the nanostructures were characterized by scanning electron microscopy and transmission electron microscopy. They exhibit well-aligned core/shell ZnO/ZnSe nanowires with a good crystalline quality although some surface roughness is associated to the deposition of ZnSe on the lateral ZnO facets. X-ray diffraction combined with Raman spectroscopy and electron diffraction demonstrate that ZnO grows along the c-axis with the wurtzite (W) structure, but ZnSe can be deposited epitaxially in the zinc-blende (ZB) structure on the M-facet of the wires. Optical transmission measurements reveal an additional contribution at about 2.15eV attributed to the type-II interfacial transition between the valence band of ZB-ZnSe and the conduction band of W-ZnO. These observations confirm the potential interest of ZnO/ZnSe core/shell nanostructures for photovoltaic applications.
机译：ZnO / ZnSe核/壳纳米线阵列已经通过在c面蓝宝石上进行金属有机化学气相沉积来生长。通过扫描电子显微镜和透射电子显微镜表征了纳米结构的形态和结构。它们显示出良好排列的核/壳ZnO / ZnSe纳米线，具有良好的晶体质量，尽管某些表面粗糙度与ZnSe在侧面ZnO面上的沉积有关。 X射线衍射与拉曼光谱和电子衍射相结合表明，ZnO沿纤锌矿（W）结构沿c轴生长，但是ZnSe可以外延沉积在M-刻面的闪锌矿（ZB）结构中。电线。光学透射测量结果表明，在约2.15eV处有额外的贡献，这归因于ZB-ZnSe价带和W-ZnO导带之间的II型界面跃迁。这些观察结果证实了ZnO / ZnSe核/壳纳米结构对光伏应用的潜在兴趣。

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