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首页> 外文期刊>Physica status solidi, B. Basic research >Weak anti-localization in delta-doped Sb layer of Si
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Weak anti-localization in delta-doped Sb layer of Si

机译：Si的Sb掺杂Sb层中的弱反定位

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The spin-orbit (SO) interaction in a delta-doped Si:Sb with 0.11 monolayer of Sb atoms is studied, based on the first observation of the positive magnetoresistance in weak perpendicular magnetic fields due to the two-dimensional weak anti-localization in this system. From the fits of the maganetoconductance data in fields perpendicular to the layer, the SO scattering time tau(so) as well as the inelastic scattering time Tin have been extracted as tau(so) approximate to 3 x 10(-11) s and tau(in) proportional to T-1, respectively The ratio is tau(so)/4tau(in) approximate to 0.60 at T = 3 K, which is larger than any other value reported, indicating that the strength of the SO interaction in Si: Sb with 0.1 monolayer of Sb is very small compared with the ones found in the thin metal films. [References: 12]
机译：基于二维弱反局部磁场中弱垂直磁场中正磁阻的首次观测，研究了具有0.11单层Sb原子的δ掺杂Si：Sb中的自旋轨道相互作用。这个系统。从垂直于该层的场中的磁导数据拟合，SO散射时间tau（so）和非弹性散射时间Tin被提取为tau（so）大约为3 x 10（-11）s和tau （in）分别与T-1成正比在T = 3 K时，比率tau（so）/ 4tau（in）近似为0.60，该比率大于任何其他报道的值，表明Si中SO相互作用的强度：具有0.1单层Sb的Sb与在金属薄膜中发现的Sb相比非常小。 [参考：12]

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