Optical properties of InGaN epitaxial layers studied using a disordered quantum-wire model

Zheng RS.; Taguchi T.

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Optical properties of InGaN epitaxial layers studied using a disordered quantum-wire model

机译：使用无序量子线模型研究InGaN外延层的光学特性

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We present a theoretical study on the optical properties of InGaN epitaxial layers based on a disordered quantum-wire model. By taking the disorder effect and the carrier relaxation into consideration. we calculate the absorption and time-dependent photoluminescence spectra of InN nanowires in GaN matrix. The theoretical results reveal that the main features of thick InGaN epilayers that are grown under constant growth conditions may be explained qualitatively by the theory of disordered quantum wires. [References: 26]

机译：我们提出了基于无序量子线模型的InGaN外延层光学特性的理论研究。通过考虑无序效应和载流子松弛。我们计算了GaN基体中InN纳米线的吸收光谱和随时间变化的光致发光光谱。理论结果表明，在恒定生长条件下生长的厚InGaN外延层的主要特征可以用无序量子线理论定性地解释。 [参考：26]

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《Physica status solidi, B. Basic research》 |2002年第3期|共8页
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Zheng RS.; Taguchi T.;
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1. Optical properties of InGaN epitaxial layers studied using a disordered quantum-wire model [J] . Zheng RS., Taguchi T. Physica status solidi, B. Basic research . 2002,第3期

机译：使用无序量子线模型研究InGaN外延层的光学特性
2. Optical properties of tellurium-doped InxGa1-xAsySb1-y epitaxial layers studied by photoluminescence spectroscopy [J] . Diaz-Reyes J., Cardona-Bedoya JA., Gomez-Herrera ML., Journal of Physics. Condensed Matter . 2003,第50期

机译：碲掺杂InxGa1-xAsySb1-y外延层的光学性质的光致发光光谱研究
3. Longitudinal optical Raman mode A_1 to calculate the indium molar fraction of epitaxial InGaN layers grown by LP-MOCVD on polar and non-polar planes [J] . C. A. Marin-Garcia, J. S. Arias Ceron, V. M. Sanchez-R Journal of materials science . 2020,第10期

机译：纵向光学拉曼模式A_1计算LP-MOCVD在极性和非极性平面上生长的外延Ingan层的铟摩尔分数
4. Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer [C] . Ali Ahmad Hadi, Shuhaimi Ahmad, Hassan Zainuriah 2012 IEEE 3rd International Conference on Photonics. . 2012

机译：AlN / InGaN缓冲层在Si（111）上外延生长基于InGaN的发光二极管的结构特性
5. Optical properties and electronic relaxation dynamics of monolayer-protected metal clusters studied using ultrafast pump-probe and magneto-optical spectroscopies [D] . Green, Thomas D. 2016

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6. Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells [O] . George Christian, Menno Kappers, Fabien Massabuau, 2018

机译：掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
7. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers [O] . Davies MJ, Hammersley S, Massabuau Fabien Charles, 2016

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Optical properties of InGaN epitaxial layers studied using a disordered quantum-wire model

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