Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P)under high uniaxial pressure X II [111]

Vasyl Shenderovskii; Valentyn Baidakov; Sergii Budsuliak; Andrii Gorin; Valerii Ermakov; Volodymyr Kolomoets; Efthymios Liarokapis; Galina Gromova; B. Kazbekova; L. Taimuratova

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Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P)under high uniaxial pressure X II [111]

机译：单轴高X II下简并掺杂n-Si（P）中电子有效质量的应变诱导非线性行为[111]

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[111]. In this paper, the strain-induced nonlinear in-crease of the electron effective mass in degenerately dopedmonocrystalline n-Si(P) was examined by comparison ofthe conductivity change predicted by scaling theory oflocalization and corresponding experimental data on speci-men conductivity change under high uniaxial pressureX ll [111].

机译：[111]。通过比较局域化定标理论预测的电导率变化和相应的高电导率下样品电导率变化的实验数据，研究了简并掺杂单晶n-Si（P）中电子有效质量的应变诱导非线性增加。单轴压力X ll [111]。

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《Physica status solidi, B. Basic research》 |2009年第3期|共3页
作者
Vasyl Shenderovskii; Valentyn Baidakov; Sergii Budsuliak; Andrii Gorin; Valerii Ermakov; Volodymyr Kolomoets; Efthymios Liarokapis; Galina Gromova; B. Kazbekova; L. Taimuratova;
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正文语种 eng
中图分类固体物理学;
关键词
conductivity; change; paper;

机译：电导率;变化;纸张;

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1. Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P)under high uniaxial pressure X II [111] [J] . Vasyl Shenderovskii, Valentyn Baidakov, Sergii Budsuliak, Physica status solidi, B. Basic research . 2009,第3期

机译：单轴高X II下简并掺杂n-Si（P）中电子有效质量的应变诱导非线性行为[111]
2. A simple theoretical analysis of the effective electron mass in heavily doped III-V semiconductors in the presence of band-tails [J] . Chakraborty PK., Datta GC., Ghatak KP. Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2003,第5期

机译：带尾存在下重掺杂III-V半导体中有效电子质量的简单理论分析
3. The Effective Electron Mass in Quantum Wells of Nonlinear Optical, III-V, Ternary and Quaternary Materials [J] . P. K. Bose, S. Bhattacharya, D. De, Advanced Science, Engineering and Medicine . 2013,第3期

机译：非线性光学，III-V，三元和四元材料的量子阱中的有效电子质量
4. Anisotropy of hot electron effective mass in n-doped InGaAs revealed by nonlinear THz-pump/THz-probe spectroscopy [C] . Blanchard F., Su F. H., Razzari L., 2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS) . 2010

机译：非线性THz泵浦/ THz探针光谱显示n掺杂InGaAs中热电子有效质量的各向异性
5. I. CHEMICAL CHARACTERIZATION OF THE CLEAN AND OXIDIZED MOLYBDENUM (100) SURFACE BY THE ADSORPTION OF GASEOUS ACIDS AND BASES IN ULTRAHIGH VACUUM AND AT ATMOSPHERIC PRESSURES. II. HIGH TEMPERATURE OXIDATION OF THE ALUMINUM(111) SURFACE. [D] . WALKER, BRIAN WILLIAM. 1981

机译：I.通过在高真空和常压下吸附气态酸和碱，对清洁和氧化的钼（100）表面进行化学表征。二。铝（111）表面的高温氧化。
6. Uniaxial strain-induced mechanical and electronic property modulation of silicene [O] . Rui Qin, Wenjun Zhu, Yalin Zhang, 2014

机译：单轴应变诱导硅的机械和电子性能调制
7. Impact of uniaxial pressure on structural and magnetic phase transitions in electron-doped iron pnictides [O] . Lu, Xingye, Tseng, Kuo-Feng, Keller, T., 2016

机译：单轴压力对电子掺杂铁素化物的结构和磁性相变的影响

Strain-induced nonlinear behavior of electron effective mass in degenerately doped n-Si(P)under high uniaxial pressure X II [111]

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