Effects of hydrostatic pressure on the conduction-electron g-factor in GaAs-Ga_(1-x)Al_xAs quantum wells

N. Porras-Montenegro; N. Raigoza; E. Reyes-GOmez; C.A.Duque; L. E. Oliveira

首页> 外文期刊>Physica status solidi, B. Basic research >Effects of hydrostatic pressure on the conduction-electron g-factor in GaAs-Ga_(1-x)Al_xAs quantum wells

【24h】

Effects of hydrostatic pressure on the conduction-electron g-factor in GaAs-Ga_(1-x)Al_xAs quantum wells

机译：静水压力对GaAs-Ga_（1-x）Al_xAs量子阱中导电电子g因子的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The effects of hydrostatic pressure on the conduction-electroneffective Lande g-factor in semiconductor GaAs–Ga_(1-x)AlAsquantum wells under growth-direction and in-plane magneticfields are studied. Calculations are performed by using theOgg–McCombe effective Hamiltonian in order to take intoaccount the non-parabolicity and anisotropy of the conductionband. Numerical results are obtained as function& of the applied hydrostatic pressure and magnetic fields. Preseat msoltsare in quite good agreement with experimental measurementsin GaAs–Gas_x AkAs quantum wells in the absence of hydrostatic pressure, and indicate new possibilities for mail:aka-ing the electron-effective g-factor in semiconductor dimensional systems.

机译：研究了在生长方向和面内磁场作用下，静水压力对半导体GaAs–Ga_（1-x）AlAs量子阱中导电电子有效Lande g因子的影响。为了考虑导带的非抛物线性和各向异性，使用Ogg–McCombe有效哈密顿量进行了计算。获得的数值结果是所施加的静水压力和磁场的函数。在没有静水压力的情况下，前置熔体与GaAs–Gas_x AkAs量子阱中的实验测量结果非常吻合，并为邮件提供了新的可能性：又称半导体尺寸系统中的电子有效g因子。

著录项

来源
《Physica status solidi, B. Basic research》 |2009年第3期|共4页
作者
N. Porras-Montenegro; N. Raigoza; E. Reyes-GOmez; C.A.Duque; L. E. Oliveira;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
semiconductor; pressure; quantum;

机译：半导体;压力;量子;

相似文献

外文文献
中文文献
专利

1. Effects of hydrostatic pressure on the conduction-electron g-factor in GaAs-Ga_(1-x)Al_xAs quantum wells [J] . N. Porras-Montenegro, N. Raigoza, E. Reyes-GOmez, Physica status solidi, B. Basic research . 2009,第3期

机译：静水压力对GaAs-Ga_（1-x）Al_xAs量子阱中导电电子g因子的影响
2. Hydrostatic pressure effects on the Lande g_(‖) factor in GaAs-Ga_(1-x)Al_xAs quantum heterostructures under applied magnetic fields [J] . J. R. Mejia-Salazar, N. Porras-Montenegro Journal of Applied Physics . 2010,第8期

机译：施加磁场时静水压力对GaAs-Ga_（1-x）Al_xAs量子异质结构中Lande g_（‖）因子的影响
3. Impurity states in a spherical GaAs-Ga_(1-x) Al_xAs quantum dots:Effects of hydrostatic pressure [J] . S.T. Perez-Merchancano, R. Franco, J. Silva-Valencia Microelectronics journal . 2008,第3a4期

机译：球形GaAs-Ga_（1-x）Al_xAs量子点中的杂质态：静水压力的影响
4. Photoluminescence energy transitions in GaAs-Ga_(1-x)Al_xAs double quantum wells: Electric and magnetic fields and hydrostatic pressure effects [C] . S.Y. Lopez, M.E. Mora-Ramos, C.A. Duque Physica B: Condensed matter . 2009

机译：GaAs-Ga_（1-x）Al_xAs双量子阱中的光致发光能量跃迁：电场和磁场以及静水压力效应
5. Magnetic, electrical transport, and hydrostatic pressure studies of the Heusler alloy (iron(1-x)V(x))(3)aluminum. [D] . Nielsen, Thomas Kurt. 2000

机译：Heusler合金（铁（1-x）V（x））（3）铝的磁，电传输和静水压力研究。
6. Exciton-related nonlinear optical properties in cylindrical quantum dots with asymmetric axial potential: combined effects of hydrostatic pressure intense laser field and applied electric field [O] . Alejandro Zapata, Ruben E Acosta, Miguel E Mora-Ramos, 2012

机译：具有不对称轴向电位的圆柱量子点中与激子有关的非线性光学性质：静水压力强激光场和外加电场的综合作用
7. High hydrostatic pressure effects on the exciton spin states in CdTe/Cd{sub 1-x}Mn{sub x}Te single quantum wells [O] . Yokoi, H., Kakudate, Y., Schmiedel, T., 1996

机译：高静压对CdTe / Cd {sub 1-x} mn {sub x} Te单量子阱中激子自旋态的影响
8. High hydrostatic pressure effects on the exciton spin states in CdTe/Cd{sub 1-x}Mn{sub x}Te single quantum wells [R] . 1996

机译：高静压对CdTe / Cd {sub 1-x} mn {sub x} Te单量子阱中激子自旋态的影响

Effects of hydrostatic pressure on the conduction-electron g-factor in GaAs-Ga_(1-x)Al_xAs quantum wells

摘要

著录项

相似文献

相关主题

期刊订阅