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首页> 外文期刊>Physica status solidi, B. Basic research >Study of the electronic properties of GaAs-based atomic layer doped field effect transistor(ALD-FET) under the influence of hydrostatic pressure
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Study of the electronic properties of GaAs-based atomic layer doped field effect transistor(ALD-FET) under the influence of hydrostatic pressure

机译：静水压力作用下GaAs基原子层掺杂场效应晶体管（ALD-FET）的电子性能研究

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摘要

Doping techniques with atomic preci-sion make possible the fabrication of very thin impuritylayers within a semiconducting host material. In practice,impurities occupy just a few atomic monolayers in thecrystal and they usually distribute following a Gaussianpattern. In first place, one can speak about 6-doped sys-tems if the doping layer width is less than 25 A. Secondly,one can also refers to the relation between the spatial ex-tension of the wave function and the thickness of the dop-ing profile. In this case, it must be fulfilled that the wavefunction extension is greater than the width of the dopingprofile. The first aspect essentially depends upon thegrowth technique, while the second is mostly associated tothe amount of impurities that ionize. Then, it is possible todeal with 6-doped quantum wells if the number of ionizedimpurities is such that the average electronic orbits overlapthus creating a two-dimensional gas of electrons or holes,according to the donor or acceptor character of the impu-rity atoms.
机译：具有原子精度的掺杂技术使得在半导体主体材料中制造非常薄的杂质层成为可能。在实践中，杂质仅占据晶体中的几个原子单层，并且它们通常按照高斯模式分布。首先，如果掺杂层宽度小于25 A，则可以说约6掺杂系统。其次，还可以指波函数的空间扩展与掺杂厚度之间的关系。 -ing个人资料。在这种情况下，必须满足的是，波函数扩展大于掺杂分布的宽度。第一个方面基本上取决于生长技术，而第二个方面主要与电离的杂质量有关。然后，如果离子化杂质的数量使得平均电子轨道重叠，从而根据杂质原子的施主或受主特征生成电子或空穴的二维气体，则可以处理6掺杂量子阱。

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