Intersubband optics in GaN-based nanostructures – physics and applications

M. Tchernycheva; L. Nevou; L. Vivien; F. H. Julien; P. K. Kandaswamy; E. Monroy; A. Vardi; G. Bahir

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Intersubband optics in GaN-based nanostructures – physics and applications

机译：GaN基纳米结构中的子带间光学器件-物理和应用

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In this paper we review the recent achievements in terms of GaN/ AlGaN-based intersubband (ISB) physics and devices. We first discuss the design issues and in particular the band bending effect and its influence on the ISB absorption. We then illustrate recent achievements in terms of III-nitride ISB devices with special emphasis on electro-optical modulator and a quantum cascade detector operating in the near-infrared.We show that these devices offer high frequency response at telecommunication wavelengths.

机译：在本文中，我们将回顾基于GaN / AlGaN的子带间（ISB）物理和器件方面的最新成就。我们首先讨论设计问题，尤其是带弯曲效应及其对ISB吸收的影响。然后，我们以III型氮化物ISB设备为例，说明了最近取得的成就，特别着重于电光调制器和在近红外下工作的量子级联检测器。我们证明了这些设备在电信波长下提供了高频响应。

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《Physica status solidi, B. Basic research》 |2010年第7期|共6页
作者
M. Tchernycheva; L. Nevou; L. Vivien; F. H. Julien; P. K. Kandaswamy; E. Monroy; A. Vardi; G. Bahir;
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正文语种 eng
中图分类固体物理学;
关键词
III–V semiconductors; optical properties; quantum wells;

机译：III–V半导体;光学特性;量子阱;

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1. Intersubband optics in GaN-based nanostructures – physics and applications [J] . M. Tchernycheva, L. Nevou, L. Vivien, Physica status solidi, B. Basic research . 2010,第7期

机译：GaN基纳米结构中的子带间光学器件-物理和应用
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Intersubband optics in GaN-based nanostructures – physics and applications

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