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首页> 外文期刊>Physica status solidi, B. Basic research >Growth and coalescence behavior of semipolar 1122 GaN on pre-structured r-plane sapphire substrates
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Growth and coalescence behavior of semipolar 1122 GaN on pre-structured r-plane sapphire substrates

机译：半极性1122 GaN在预结构r面蓝宝石衬底上的生长和聚结行为

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摘要

Semipolar 1122 oriented GaN has been grown on a prestructured r-plane sapphire substrate. By using silicon doped marker layers (MLs) we have been able to monitor the growth evolution of the stripes until coalescence. With that technique we correlated the growth type (direction) with the results of cathodoluminescence (CL) and transmission electron microscopy. Both characterization methods show only a few defects for the major part of the structure and a relatively high defect density for material grown in a-direction at one side of the stripes. It is shown that during coalescence these defects are mainly terminated resulting in a flat, planar 1122 GaN layer with strongly reduced defect density. Additionally, X-ray diffraction (XRD) measurements show the high quality of these layers.
机译：半极性1122取向的GaN已在预构造的r面蓝宝石衬底上生长。通过使用硅掺杂标记层（ML），我们已经能够监视条纹的生长演变，直到聚结为止。利用该技术，我们将生长类型（方向）与阴极发光（CL）和透射电子显微镜的结果相关联。两种表征方法都只显示出结构主要部分的少量缺陷，而在条纹的一侧沿a方向生长的材料的缺陷密度相对较高。结果表明，在聚结期间，这些缺陷主要被终止，从而导致具有大大降低的缺陷密度的平坦的平面1122 GaN层。此外，X射线衍射（XRD）测量显示出这些层的高质量。

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