Sulfurization of near-stoichiometric CuIn precursor and the influence of low-temperature slopes on morphology and structural quality

Dombrowa A.; Lehmann C.; Pettenkofer C.

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Sulfurization of near-stoichiometric CuIn precursor and the influence of low-temperature slopes on morphology and structural quality

机译：接近化学计量比的CuIn前驱物的硫化和低温斜率对形态和结构质量的影响

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Polycrystalline CuInS _2 (CIS) films are prepared by sulfurization of CuIn metallic precursors with Cu/In=1.2 on Mo substrates. Variation of the rapid thermal processing (RTP) parameters adjusted to the low copper surplus yielded near stoichiometric CIS films with considerably less CuS _x precipitation at the surface. A start temperature and low temperature slopes were introduced to guarantee crystal quality and large grain size. XPS/UPS, X-ray diffraction measurement, and scanning electron microscopy data show the distinct properties of the chalcopyrite phase and its morphological structure in comparison to the standard sulfurization process. A considerable improvement has been achieved by variation of the temperature profiles. The proposed process modules obtain near stoichiometric CIS films for industrial solar cell production

机译：通过在Mo基片上硫化Cu / In = 1.2的CuIn金属前驱物制备多晶CuInS _2（CIS）薄膜。调整为低铜剩余量的快速热处理（RTP）参数的变化产生了接近化学计量的CIS膜，表面的CuS _x沉淀明显减少。引入起始温度和低温斜率以确保晶体质量和大晶粒尺寸。 XPS / UPS，X射线衍射测量和扫描电子显微镜数据显示，与标准硫化工艺相比，黄铜矿相具有明显的特性及其形态结构。通过改变温度曲线已经实现了相当大的改进。拟议的工艺模块获得接近化学计量的CIS膜，用于工业太阳能电池生产

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《Physica status solidi, B. Basic research》 |2012年第9期|共6页
作者
Dombrowa A.; Lehmann C.; Pettenkofer C.;
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正文语种 eng
中图分类固体物理学;
关键词
Photoemission spectroscopy; Semiconductor surfaces; Solar cells; Thin films;

机译：光发射光谱;半导体表面;太阳能电池;薄膜;

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1. Sulfurization of near-stoichiometric CuIn precursor and the influence of low-temperature slopes on morphology and structural quality [J] . Dombrowa A., Lehmann C., Pettenkofer C. Physica status solidi, B. Basic research . 2012,第9期

机译：接近化学计量比的CuIn前驱物的硫化和低温斜率对形态和结构质量的影响
2. Correlation between soft annealing conditions and structural, microstructural, morphological, and optical properties of CuInS_2 thin films prepared by sulfurization of stacked precursor [J] . Seung Wook Shin, K.V. Gurav, Myeng Gil Gang, Journal of Crystal Growth . 2014,第maya15期

机译：软化退火条件与通过堆叠前驱体硫化制备的CuInS_2薄膜的结构，微结构，形态和光学性质之间的相关性
3. Influence of precursor thin-film quality on the structural properties of large-area MoS_2 films grown by sulfurization of MoO_3 on c-sapphire [J] . Spankova M., Sojkova M., Dobrocka E., Applied Surface Science . 2021,第Pta1期

机译：前体薄膜质量对C-蓝宝石MOO_3硫化的大面积MOS_2薄膜结构特性的影响
4. Nanocrystalline CuInS/sub 2/ and CuInSe/sub 2/ via low-temperature pyrolysis of single-source molecular precursors [C] . Castro, S.L., Bailey, . 2003

机译：通过单源分子前体的低温热解制备纳米晶CuInS / sub 2 /和CuInSe / sub 2 /
5. Influence of Shelling Temperature and Time on the Optical and Structural Properties of CuInS2/ZnS Quantum Dots. [D] . Robinson, Colette. 2015

机译：脱壳温度和时间对CuInS2 / ZnS量子点光学和结构性质的影响。
6. Influence Analysis and Optimization for Aggregate Morphological Characteristics on High- and Low-Temperature Viscoelasticity of Asphalt Mixtures [O] . Yongchun Cheng, Wensheng Wang, Jinglin Tao, 2018

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7. Sulfurization of near stoichiometric CuIn precursor and the influence of low temperature slopes on morphology and structural quality [O] . Dombrowa A., Lehmann C., Pettenkofer C 2012

机译：近化学计量CuIn前驱体的硫化和低温斜率对形态和结构质量的影响
8. Nanocrystalline Chalcopyrite Materials (CuInS2 and CuInSe2) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors [R] . Castro, S. L. , Bailey, S. G. , Raffaelle, R. P. , 2003

机译：纳米晶黄铜矿材料（CuIns2和CuInse2）通过分子单源前体的低温热解

Sulfurization of near-stoichiometric CuIn precursor and the influence of low-temperature slopes on morphology and structural quality

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