PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM WELLS

Ilaiwi KF.; Elsaid M.

首页> 外文期刊>Physica status solidi, B. Basic research >PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM WELLS

【24h】

PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM WELLS

机译：有限屏障量子阱中浅层掺杂剂的光化

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in finite-barrier GaAs/Ga1-xAlxAs quantum wells as well as the binding energy as a function of well width. The effect of a magnetic field is also considered. [References: 8]

机译：对于有限势垒GaAs / Ga1-xAlxAs量子阱中的浅施主，计算了电离截面对光子能量的依赖性，以及结合能随阱宽度的变化。还考虑了磁场的影响。 [参考：8]

著录项

来源
《Physica status solidi, B. Basic research》 |1995年第1期|共5页
作者
Ilaiwi KF.; Elsaid M.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词

相似文献

外文文献
中文文献
专利

1. PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM WELLS [J] . Ilaiwi KF., Elsaid M. Physica status solidi, B. Basic research . 1995,第1期

机译：有限屏障量子阱中浅层掺杂剂的光化
2. Hydrostatic pressure,electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs-Gai_,AIAs quantum dots [J] . M. G. Barseghyan, A. A. Kirakosyan, C. A. Duque Physica status solidi, B. Basic research . 2009,第3期

机译：静压力，电场和磁场对圆柱GaAs-Gai_，AIAs量子点中浅施主杂质态和光电离截面的影响
3. The effect of intense laser field on the photoionization cross-section and binding energy of shallow donor impurities in graded quantum-well wire under an electric field [J] . Kasapoglu E, Sari H, Yesilgul U, Journal of Physics. Condensed Matter . 2006,第27期

机译：电场作用下强激光场对梯度量子阱导线中光电离截面和浅施主杂质结合能的影响
4. Binding energy and photoionization cross section of hydrogen-like donor impurity in cylindrical InAs Pschl-Teller quantum layer in magnetic field [C] . M. G. Barseghyan Alireza Hakimyfard Marwan Zuhair C. A. Duque and A. A. Kirakosyan International conference on laser physics . 2011

机译：磁场中圆柱形INAS PSCHL-extralsum层中氢气样供体杂质的粘合能量和光离子横截面
5. AN INVESTIGATION OF SHALLOW DONOR IMPURITIES IN SILICON BY ENDOR. [D] . HALE, EDWARD BOYD. 1968

机译：用endor对硅中浅层施主杂质进行调查。
6. The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInxNyAs1−y/GaAs quantum well [O] . Unal Yesilgul, Fatih Ungan, Serpil Şakiroğlu, 2012

机译：磁场对Ga1-xInxNyAs1-y / GaAs量子阱中浅施主杂质的杂质结合能的影响
7. The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInxNyAs1−y/GaAs quantum well [O] . Unal Yesilgul, Fatih Ungan, Serpil Şakiroğlu, 2012

机译：磁场对Ga1-xInxNyAs1-y / GaAs量子阱中浅施主杂质的杂质结合能的影响
8. Polaron and finite-barrier height effects on polarizabilities of shallow donors in quantum wells [R] . Zorkani, I. , Filali, L. 1998

机译：极化子和有限势垒高度对量子阱中浅层供体极化率的影响

PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM WELLS

摘要

著录项

相似文献

相关主题

期刊订阅