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首页> 外文期刊>Physica status solidi, B. Basic research >Binding energy of a hydrogenic donor impurity in an ellipsoidal finite-potential quantum dot
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Binding energy of a hydrogenic donor impurity in an ellipsoidal finite-potential quantum dot

机译：椭圆体有限位量子点中氢供体杂质的结合能

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摘要

In this article, the binding energy of a hydrogenic donor impurity in weakly oblate Ellipsoidal Quantum Dot (EQD), using the perturbation theory within the framework of effective mass approximation, is investigated. In this regard, the binding energies of 1S, 2S and 2P0 states for GaAs/Alx Ga1-x As structures, as functions of the dot radius and ellipticity constant, are calculated. Results show that variations of binding energies of a hydrogenic impurity with respect to the dot dimension are similar to the case of Spherical Quantum Dot (SQD). In addition, it is found that the binding energy is inversely proportional to the ellipticity constant. This behavior is more profound for 2P0 state, where, depending on the dot's dimensionality and ellipticity, the binding energy may become negative.
机译：在本文中，利用有效质量近似框架内的扰动理论，研究了弱扁椭圆形量子点（EQD）中氢供体杂质的结合能。在这方面，计算出GaAs / Alx Ga1-x As结构的1S，2S和2P0态的结合能，其是点半径和椭圆率常数的函数。结果表明，氢杂质的结合能相对于点尺寸的变化类似于球形量子点（SQD）的情况。另外，发现结合能与椭圆率常数成反比。对于2P0状态，此行为更为明显，在2P0状态下，根据点的维数和椭圆率，结合能可能变为负值。

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