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Stability of magnetic polarons in magnetic semiconductor single electron transistors: The effect of Coulomb interaction and external magnetic field

机译:磁性半导体单电子晶体管中磁极化子的稳定性:库仑相互作用和外部磁场的影响

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摘要

In a magnetic single electron transistor(SET), which consists of a magnetic quantum dot(QD) coupled electrically to nonmagnetic source, drain, and gate electrodes, a magnetic polaron(MP) formation may occur, that is, the charge carrier spin may spin-polarize the magnetic atoms of the QD and simultaneously the carrier becomes more tightly bound to the QD. We have studied theoretically the effect of the Coulomb interaction and magnetic field on the stability of the MPs in ferromagnetic SETs in the Coulomb blockade regime. The calculated results show that the temperature range, where MP is stable can be controlled by the gate voltage of the SET. At temperatures below the Curie temperature the stability decreases with magnetic field, whereas at higher temperatures the opposite is true. The Coulomb repulsion between two charge carriers separates the spin-up and spin-down energy levels, which stabilizes the MP further.
机译:在由电耦合到非磁性源极,漏极和栅极的磁性量子点(QD)组成的磁性单电子晶体管(SET)中,可能会发生磁极化子(MP)的形成,即电荷载流子可能自旋使QD的磁性原子自旋极化,同时载流子变得更紧密地与QD结合。我们从理论上研究了库仑相互作用和磁场对库仑封锁状态下铁磁性SET中MP稳定性的影响。计算结果表明,MP稳定的温度范围可以通过SET的栅极电压来控制。在居里温度以下的温度下,稳定性随磁场而降低,而在较高温度下,则相反。两个电荷载流子之间的库仑斥力将自旋向上和向下旋转的能级分开,这进一步稳定了MP。

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