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首页> 外文期刊>Physica status solidi, B. Basic research >Phase separation in SiOx films annealed under enhanced hydrostatic pressure
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Phase separation in SiOx films annealed under enhanced hydrostatic pressure

机译:在高压下退火的SiOx薄膜的相分离

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摘要

The effect of enhanced hydrostatic pressure (HP, (10-12) × 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450-1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of non-stoichiometric SiOx most efficiently at about 450 °C. In spite of enhanced SiOx decomposition, visible photoluminescence appears in HP-treated samples at higher annealing temperatures in comparison to those annealed under ambient pressure (AP, 105 Pa). Contrary to that, application of HP results in essential enhancement of near-infrared emission at lower annealing temperatures as compared to processing under AP. This can be related to pressure-stimulated crystallization of Si inclusions.
机译:通过红外光谱和光致发光测量研究了静水压力(HP,(10-12)×108 Pa)的增加对在450-1000°C下处理的低氧化硅层热激发相分解的影响。 HP在约450°C下最有效地刺激非化学计量SiOx的分解。尽管SiOx分解增强,但与在环境压力(AP,105 Pa)下退火的样品相比,在较高退火温度下,HP处理的样品中仍会出现可见的光致发光。与此相反,与AP处理相比,HP的应用导致在较低的退火温度下实质上增强了近红外发射。这可能与硅夹杂物的压力激发结晶有关。

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