Carbon nanotubes for interconnects in VLSI integrated circuits

Robertson J; Zhong G; Telg H; Thomsen C; Warner JM; Briggs GAD; Detlaff U; Roth S; Dijon J

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Carbon nanotubes for interconnects in VLSI integrated circuits

机译：用于VLSI集成电路中互连的碳纳米管

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The paper reviews the requirements for carbon nanotubes to be used as interconnects in VLSI integrated circuits. It describes the production by chemical vapour deposition of high density arrays of nanotubes suitable for use as interconnects, and describes their characterisation by Raman and transmission electron microscopy. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

机译：本文回顾了碳纳米管在VLSI集成电路中用作互连的要求。它描述了通过化学气相沉积生产适合用作互连的纳米管的高密度阵列的方法，并描述了其通过拉曼光谱和透射电子显微镜的表征。（C）2008 WILEY-VCH Verlag GmbH＆Co.KGaA，Weinheim

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《Physica status solidi, B. Basic research》 |2008年第10期|共5页
作者
Robertson J; Zhong G; Telg H; Thomsen C; Warner JM; Briggs GAD; Detlaff U; Roth S; Dijon J;
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正文语种 eng
中图分类固体物理学;
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CLASSIFIED CATALYST NANOPARTICLES; LOW-TEMPERATURE SYNTHESIS; GROWTH; SPECTROSCOPY; FUTURE;

机译：分类催化剂纳米粒子低温合成增长光谱学未来;

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1. Carbon nanotubes for interconnects in VLSI integrated circuits [J] . Robertson J, Zhong G, Telg H, Physica status solidi, B. Basic research . 2008,第10期

机译：用于VLSI集成电路中互连的碳纳米管
2. CNT integration on different materials suitable for VLSI interconnects [Intégration de nanotubes de carbone sur différents matériaux représentatifs des connexions dans les circuits intégrés] [J] . Okuno H., Fournier A., Quesnel E., Comptes rendus. Physique . 2010,第5a6期

机译：碳纳米管在适合VLSI互连的不同材料上的集成[碳纳米管在代表集成电路中连接的不同材料上的集成]
3. Towards Entire-Carbon-Nanotube Circuits: The Fabrication of Single-Walled-Carbon-Nanotube Field-Effect Transistors with Local Multiwalled-Carbon-Nanotube Interconnects [J] . Xuelei Liang, Sheng Wang, Xianlong Wei, Advanced Materials . 2009,第13期

机译：走向整个碳纳米管电路：带有局部多壁碳纳米管互连的单壁碳纳米管场效应晶体管的制造
4. Studies on the Application of Carbon Nanotube as Interconnects for Nanometric VLSI Circuits [C] . C. Thimvenkatesan, J. Raja International Conference on Emerging Trends in Engineering Technology . 2009

机译：碳纳米管作为纳米VLSI电路互连的研究
5. High-frequency impedance extraction of interconnects considering substrate effects and exploration of single-walled carbon nanotubes for future VLSI interconnects. [D] . Srivastava, Navin. 2009

机译：考虑衬底效应的互连线的高频阻抗提取和用于未来VLSI互连线的单壁碳纳米管的探索。
6. CMOS-based carbon nanotube pass-transistor logic integrated circuits [O] . Li Ding, Zhiyong Zhang, Shibo Liang, -1

机译：基于CMOS的碳纳米管传输晶体管逻辑集成电路
7. Interconnect Challenges and Carbon Nanotube as Interconnect in Nano VLSI Circuits [O] . Davood Fathi, Behjat Forouzandeh 2010

机译：将挑战和碳纳米管互连为纳米VLSI电路的互连
8. Extraction of MOS VLSI (Very-Large-Scale-Integrated) Circuit Models Including Critical Interconnect Parasitics [R] . Su, S. L. 1987

机译：提取包括关键互连寄生效应的mOs VLsI（超大规模集成）电路模型

Carbon nanotubes for interconnects in VLSI integrated circuits

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