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首页> 外文期刊>Physica status solidi, B. Basic research >Angular dependence of the upper critical field B_(c2) for CeCu_2Si_2
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Angular dependence of the upper critical field B_(c2) for CeCu_2Si_2

机译：CeCu_2Si_2的上临界场B_（c2）的角度依赖性

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摘要

The angular dependence of the upper critical field B_(c2) for A/Stype CeCu2Si2 samples is determined. Both, the anisotropies within and outside the basal plane are measured using an angleresolved resistivity technique, where an external magnetic field serves as a directional probe. Two high-quality A/S-type single crystals are studied (T_N～0.8 K, T_c～0.6 K). For the case where the magnetic field rotates within the basal plane, small variations of ～0.5% are observed and ascribed to sample misalignment. When the magnetic field rotates from the basal plane towards the [001] direction, a strong anisotropy of B_(c2) (～20%) is observed. By comparing the expected orbital- and Pauli-limiting fields, the strong effect of Pauli paramagnetism is realized. The latter is taken into account when using the anisotropic mass model to study the field anisotropy. Deviations are observed from such a conventional model.
机译：确定了A / S型CeCu2Si2样品的上临界场B_（c2）的角度依赖性。使用角度分辨电阻率技术测量基础平面内外的各向异性，其中外部磁场用作定向探针。研究了两种高质量的A / S型单晶（T_N〜0.8 K，T_c〜0.6 K）。对于磁场在基面内旋转的情况，观察到〜0.5％的微小变化，并归因于样品未对准。当磁场从基面朝[001]方向旋转时，观察到B_（c2）的强各向异性（约20％）。通过比较预期的轨道和保利极限场，可以实现保利顺磁性的强大作用。当使用各向异性质量模型研究场各向异性时，要考虑后者。从这种常规模型观察到偏差。

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