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首页> 外文期刊>Physica status solidi, B. Basic research >Investigation of ZnTe thin films grown by Pulsed Laser Deposition method
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Investigation of ZnTe thin films grown by Pulsed Laser Deposition method

机译：脉冲激光沉积法生长ZnTe薄膜的研究

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This paper is devoted to optimization of the Pulsed Laser Deposition (PLD) growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, optical and electrical properties of grown films. Studies of the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The optical transmission and reflectance in the energy range 1.5-5.5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and the value of the absorption coefficient, for allowed direct transitions, has been determined as a function of photon energy. We found that the undoped ZnTe films, which were grown by the PLD method, are typically p-type and possess resistivity in the range of 103 cm at room temperature.
机译：本文致力于优化各种衬底上ZnTe薄膜的脉冲激光沉积（PLD）生长条件，并随后研究生长过程的相关参数，生长薄膜的结构，光学和电学性质。研究了生长参数对生长膜的结构质量和性能的影响。 X射线衍射测量表明，在最佳衬底温度下沉积的ZnTe薄膜具有（111）择优取向且平均晶粒尺寸大的特征。测量了在各种基板温度下生长的薄膜在1.5-5.5 eV能量范围内的光学透射率和反射率。我们根据在各种基板温度下生长的样品的透射光谱，计算了吸收系数随光子能量的变化。对获得的数据进行分析，并确定允许的直接跃迁的吸收系数值是光子能量的函数。我们发现，通过PLD方法生长的未掺杂ZnTe薄膜通常为p型，并且在室温下的电阻率在103 cm范围内。

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