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首页> 外文期刊>Physica status solidi, B. Basic research >Modulation of critical current density in polycrystalline boron-doped diamond by surface modification
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Modulation of critical current density in polycrystalline boron-doped diamond by surface modification

机译：表面改性对掺硼多晶金刚石中临界电流密度的调制

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摘要

The maximum current flowed with zero resistance, referred to the critical current density, is desired to be sufficiently large in order to apply superconducting wire rods and electromagnets to various devices. Although the critical current density can be enhanced by introduction of non-superconducting impurities, the transition temperature would become diminished in such a case. Here, we report modulation of a critical current density in heavily boron-doped diamonds (BDDs) by changing the surface-termination without introducing any impurity. The surface of a BDD was changed between hydrogen- and oxygen-termination. As a result, the critical current density could be modulated in a reversible manner between the hydrogen- and oxygen-terminated diamonds with maintenance of the superconducting transition temperature. This is because the volume fractions of the superconducting phases were modulated by surface modification.
机译：期望以零电阻流动的最大电流（称为临界电流密度）足够大，以便将超导线材和电磁体应用于各种设备。尽管可以通过引入非超导杂质来提高临界电流密度，但在这种情况下，转变温度会降低。在这里，我们报告了通过改变表面端接而没有引入任何杂质的情况，调制重硼掺杂金刚石（BDD）中的临界电流密度。 BDD的表面在氢封端和氧封端之间变化。结果，可以在氢和氧封端的金刚石之间以可逆方式调节临界电流密度，同时保持超导转变温度。这是因为通过表面改性来调节超导相的体积分数。

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