Use of dynamic compression to probe semiconductor response at large strains

Grivickas P.; McCluskey M.D.; Gupta Y.M.

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Use of dynamic compression to probe semiconductor response at large strains

机译：使用动态压缩探测大应变下的半导体响应

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Large strains in semiconductors are expected to be more common in future electronic devices utilizing nanostructure components. Hydrostatic pressure (HP) and uniaxial stress (US) loading have inherent limitations for probing the desired strain conditions. Uniaxial strain loading, achieved in dynamic compression experiments, is particularly attractive for attaining well-defined, large strains and to complement HP and US loading. Recent dynamic compression studies on III-V semiconductors (GaN, GaP, and GaAs) are summarized to review notable findings ranging from improved deformation potentials to free carrier properties. These findings demonstrate the benefits of dynamic compression experiments for semiconductor research.

机译：在使用纳米结构部件的未来电子设备中，预计半导体中的大应变将更为普遍。静水压力（HP）和单轴应力（US）载荷对于探测所需的应变条件具有固有的局限性。在动态压缩实验中实现的单轴应变加载，对于获得定义明确的大应变并补充HP和US加载特别有吸引力。总结了最近对III-V半导体（GaN，GaP和GaAs）进行的动态压缩研究，以综述从改进的形变电势到自由载流子特性的显着发现。这些发现证明了动态压缩实验对半导体研究的好处。

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《Physica status solidi, B. Basic research》 |2013年第4期|共5页
作者
Grivickas P.; McCluskey M.D.; Gupta Y.M.;
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正文语种 eng
中图分类固体物理学;
关键词
Dynamic compression; III-V semiconductors; Time-resolved spectroscopy; Uniaxial strain;

机译：动态压缩;III-V族半导体;时间分辨光谱;单轴应变;

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2. Use of dynamic compression to probe semiconductor response at large strains [J] . Grivickas P., McCluskey M.D., Gupta Y.M. Physica status solidi, B. Basic research . 2013,第4期

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3. Flow Stress Measurement and Dynamic Response Analysis of Hot Compression Test Machine at High Strain Rates [J] . Hyeon-Woo PARK, Kyunghyun KIM, Hyung-Won PARK, ISIJ international . 2020,第3期

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Use of dynamic compression to probe semiconductor response at large strains

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