Collective dimer stress induced dichroism in II-VI semiconductors

Balderas-Navarro RE.; Bonanni A.; Ramil AM.; Sitter H.; Stifter D. Hingerl K.

首页> 外文期刊>Physica status solidi, B. Basic research >Collective dimer stress induced dichroism in II-VI semiconductors

【24h】

Collective dimer stress induced dichroism in II-VI semiconductors

机译：II-VI族半导体中集体二聚体应力诱导的二色性

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The physical origin of sharp resonances in reflectance difference spectroscopy data at the critical points of the dielectric function of bulk semiconductors is shown to arise from an uniaxial in-plane stress component. These resonances are induced at the critical points via lifting the degeneracy of the optical transitions at the L and Gamma points due to the resulting anisotropic strain. [References: 15]

机译：在大块半导体的介电功能的临界点处的反射率差光谱数据中的尖锐共振的物理起因显示为源自单轴面内应力分量。由于产生的各向异性应变，通过解除L点和Gamma点处光学跃迁的简并性，在临界点处引发了这些共振。 [参考：15]

著录项

来源
《Physica status solidi, B. Basic research》 |2002年第1期|共5页
作者
Balderas-Navarro RE.; Bonanni A.; Ramil AM.; Sitter H.; Stifter D. Hingerl K.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Collective dimer stress induced dichroism in II-VI semiconductors [J] . Balderas-Navarro RE., Bonanni A., Ramil AM., Physica status solidi, B. Basic research . 2002,第1期

机译：II-VI族半导体中集体二聚体应力诱导的二色性
2. Theoretical and experimental studies of stressed nanoparticles of II-VI semiconductors [J] . D. Lourençoni Ferreira, F. Oliveira Silva, L. Cristina de Souza Viol, Journal of Chemical Physics . 2010,第1期

机译：II-VI半导体应力纳米粒子的理论和实验研究
3. Theoretical and experimental studies of stressed nanoparticlesof II-VI semiconductors [J] . D. Lourenconi Ferreira, F. Oliveira Silva, L. Cristina de Souza Viol, The Journal of Chemical Physics . 2010,第1期

机译：II-VI半导体应力纳米颗粒的理论和实验研究
4. The nanometer scaled defects induces with the dislocation motion in II-VI insulated semiconductors [C] . V. N. Babentsov, V. A. Boyko, A. F. Kolomys, International Workshop on Semiconductor-on-Insulator Materials and Devices . 2011

机译：纳米缩放的缺陷诱导II-VI绝缘半导体中的位错运动
5. Study of thin-film induced stresses and stress-induced waveguides in bulk semiconductors [D] . Al-Mashary, Bandar Abdullah 1996

机译：体半导体中的薄膜感应应力和应力感应波导的研究
6. Torsional stress induces left-handed helical stretches in DNA of natural base sequence: circular dichroism and antibody binding. [O] . E Di Capua, A Stasiak, T Koller, 1983

机译：扭转应力在天然碱基序列的DNA中引起左旋螺旋拉伸：圆二色性和抗体结合。
7. (001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors [O] . Olguín, D., Baquero, R. 1995

机译：（001） - 宽带隙中的表面诱导的体积和表面态 sincblende II-VI半导体
8. Microscopy of stress-induced morphological development and dislocation nucleation during semiconductor epitaxy [R] . Jesson, D. E., Chen, K., Pennycook, S. J., 1994

机译：半导体外延过程中应力诱导形态发展和位错成核的显微镜观察

Collective dimer stress induced dichroism in II-VI semiconductors

摘要

著录项

相似文献

相关主题

期刊订阅