Zn1-xMnxTe and Cd1-xMnxTe crystals doped with phosphorus have been investigated by means of the measurement of Hall effect, photoluminescence and reflectance. By annealing under high pressure of nitrogen (up to 4 MPa) at T = 800 degreesC for a week, a free hole density as high as 5 x 10(18) cm(-3) was achieved in Zn0.95Mn0.05Te, while in Cd0.99Mn0.01Te it was only 8 x 10(18) cm(-3). The phosphorus acceptor binding energy in Zn0.975Mn0.025Te and Cd0.99Mn0.01Te was found to be (0.036 +/- 0.002) eV and (0.054 +/- 0.002) eV, respectively. [References: 6]
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机译：通过测量霍尔效应，光致发光和反射率，研究了掺磷的Zn1-xMnxTe和Cd1-xMnxTe晶体。通过在T = 800摄氏度的氮气高压下（最高4 MPa）退火一周，在Zn0.95Mn0.05Te中可获得高达5 x 10（18）cm（-3）的自由空穴密度，而在Cd0.99Mn0.01Te中只有8 x 10（18）cm（-3）。发现Zn0.975Mn0.025Te和Cd0.99Mn0.01Te中的磷受体结合能分别为（0.036 +/- 0.002）eV和（0.054 +/- 0.002）eV。 [参考：6]
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