Early demonstrations (1952-64) of the usefulness of high pressure in semiconductor research

Paul W

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Early demonstrations (1952-64) of the usefulness of high pressure in semiconductor research

机译：早期证明（1952-64）高压在半导体研究中的有用性

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The usefulness of experiments at high pressure done in the period 1952-64, on the establishment of semiconductor band structures and the explanation of semiconductor properties at atmospheric pressure is reviewed. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：回顾了1952-64年间进行的高压实验对建立半导体能带结构和解释大气压下半导体特性的有用性。（C）2004 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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《Physica status solidi, B. Basic research》 |2004年第14期|共4页
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Paul W;
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中图分类固体物理学;
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1. Early demonstrations (1952-64) of the usefulness of high pressure in semiconductor research [J] . Paul W Physica status solidi, B. Basic research . 2004,第14期

机译：早期证明（1952-64）高压在半导体研究中的有用性
2. First-Principles Calculations of the Structural, Electronic, Elastic and Optical Properties of LiGaS2 and LiGaSe2 Semiconductors Under Different Pressures [J] . Kumar V., Chandra S., Santosh R. Journal of Electronic Materials . 2018,第2期

机译：在不同压力下，LIGAS2和LIGASE2半导体的结构，电子，弹性和光学性质的第一原理计算
3. Electrical and Magnetic Properties of the Diluted Magnetic Semiconductors Cd_(1-x)JMn_xGeP_2 and Cd_(1-x)Mn_xGeAs_2 at High Pressures [J] . A. Yu. Mollaev, I. K. Kamilov, R. K. Arslanov, Inorganic materials . 2012,第9期

机译：高压下稀磁半导体Cd_（1-x）JMn_xGeP_2和Cd_（1-x）Mn_xGeAs_2的电和磁性能
4. First-principle calculations of Debye temperature of optoelectronic LiGaS_2 and LiGaSe_2 semiconductors under different pressures [C] . S. Chandra, V. Kumar, Y. Singh Optical Components and Materials XVI . 2019

机译：不同压力下光电子LiGaS_2和LiGaSe_2半导体的德拜温度的第一性原理计算
5. Phonons in some compound semiconductors and diluted magnetic semiconductors at high pressure. [D] . Shinde, Satyam M. 2006

机译：某些化合物半导体和稀释的磁性半导体中的高压声子。
6. Benchmark Investigation of Band-Gap Tunability of Monolayer Semiconductors under Hydrostatic Pressure with Focus-On Antimony [O] . Xiangyu Dai, Zhengfang Qian, Qiaolu Lin, 2020

机译：浓度对锑静压压力下单层半导体带间隙可调性的基准调查
7. High Pressure and Development of New Materials. Electrical Properties of Semiconductors and Superconductors Prepared at High Pressure. [O] . Ichimin Shirotani 1997

机译：高压和新材料的发展。高压制备半导体和超导体的电性能。
8. Donor spectroscopy at large hydrostatic pressures and transport studies in compound semiconductors [R] . Hsu, L. 1997

机译：在大型静水压力下的供体光谱和化合物半导体中的传输研究

Early demonstrations (1952-64) of the usefulness of high pressure in semiconductor research

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