CARRIER TRANSPORT IN INP-BASED LASERS, MODULATORS, AND OPTICAL SWITCHING DEVICES

Hangleiter A.; Knorr C.; Konig P.; Ottenwalder D.; Riedl T. Scholz F.; Zimmermann M.; Hillmer H.; Steinhagen F.; Burkhard H.; Geiger M.

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CARRIER TRANSPORT IN INP-BASED LASERS, MODULATORS, AND OPTICAL SWITCHING DEVICES

机译：基于INP的激光，调制器和光开关器件中的载流子传输

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Carrier transport effects of various kinds provide an important performance limitation to InP-based semiconductor lasers, modulators, and optical switching devices. We demonstrate how thermally activated tunneling dominates the hole transport in InGaAs/InGaAsP/InP optical switching structures. For InGaAs/InGaAlAs quantum well lasers, we show that a carrier culture time into the quantum wells of about 1.5 ps severely Limits the modulation performance. [References: 7]

机译：各种载流子传输效应对基于InP的半导体激光器，调制器和光开关器件提供了重要的性能限制。我们演示了热激活隧穿如何在InGaAs / InGaAsP / InP光学开关结构中主导空穴传输。对于InGaAs / InGaAlAs量子阱激光器，我们表明，进入量子阱的载流子培养时间约为1.5 ps严重限制了调制性能。 [参考：7]

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《Physica status solidi, B. Basic research》 |1997年第1期|共4页
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Hangleiter A.; Knorr C.; Konig P.; Ottenwalder D.; Riedl T. Scholz F.; Zimmermann M.; Hillmer H.; Steinhagen F.; Burkhard H.; Geiger M.;
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1. CARRIER TRANSPORT IN INP-BASED LASERS, MODULATORS, AND OPTICAL SWITCHING DEVICES [J] . Hangleiter A., Knorr C., Konig P., Physica status solidi, B. Basic research . 1997,第1期

机译：基于INP的激光，调制器和光开关器件中的载流子传输
2. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gbs(-1) directly modulated lasers and 40Gbs(-1) signal-regenerative amplifiers [J] . Sugawara M, Hatori N, Ishida M, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2005,第13期

机译：用于光通信的自组装量子点光学设备的最新进展：温度不敏感的10 Gbs（-1）直接调制激光器和40Gbs（-1）信号再生放大器
3. Multilevel conductance switching and carrier transport mechanisms of memory devices based on an ITO/PVK:Ag nanoparticles/Al structure [J] . Onlaor Korakot, Thiwawong Thutiyaporn, Tunhoo Benchapol Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2018,第期

机译：基于ITO / PVK / AL结构的基于ITO / PVK的存储器设备的多电平导电机制：AG纳米粒子/ Al结构
4. InP-based carrier-injection optical switch for photonic switching [C] . Inoue H., Amada E., Kato T. Global Telecommunications Conference, 1990, and Exhibition. 'Communications: Connecting the Future', GLOBECOM '90., IEEE . 1990

机译：基于InP的载流子注入光开关，用于光子交换
5. Optical Feedback Effects Within 1.55 μm InP-Based DFB Laser Integrated Mach-Zehnder Modulators for up to 100 GBd Data Transmission =Optische Rückkopplungseffekte in 1.55 μm InP-basierten DFB Laser integrierten Mach-Zehnder Modulatoren für bis zu 100 GBd D [D] . Lange, Sophie Gloria. 2019

机译：基于1.55μm的INP的DFB激光集成Mach-Zehnder调制器的光学反馈效果高达100 GBD数据传输=1.55μm基于INP的DFB激光器集成Mach-Zehnder调制器中的光学反馈效果最多100 GBD D.
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. Nonlinear Optoelectronic Devices Based on Nanocrystalline Silicon Films: Acoustoelectrical Switches for Optical Modes, Nonliear Optical Switches and Lasers [O] . Dmitry E. 2011

机译：基于纳米晶体硅膜的非线性光电器件：用于光学模式的声电开关，非光电开关和激光器
8. Review of Selected Smart Pixels: Self Electro-Optic Effect Devices, SurfaceEmitting Laser Logic Devices, Double Heterostructure Opto-Electronic Switch, Diode Laser Logic, Quenched-Laser Optical Gates [R] . Parker, M. A., Michalak, R. J., Kimmet, J. S., 1995

机译：所选智能像素的回顾：自电光效应器件，surfaceEmitting激光逻辑器件，双异质结构光电开关，二极管激光逻辑，淬火激光光学门

CARRIER TRANSPORT IN INP-BASED LASERS, MODULATORS, AND OPTICAL SWITCHING DEVICES

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