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首页> 外文期刊>Physica status solidi, B. Basic research >Influence of surface roughness scattering on electron low-field mobility in thin undoped GaAs-in-Al2O3 nanowires with rectangular cross-section
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Influence of surface roughness scattering on electron low-field mobility in thin undoped GaAs-in-Al2O3 nanowires with rectangular cross-section

机译：表面粗糙度散射对矩形截面无掺杂GaAs-in-Al2O3纳米薄膜中电子低场迁移率的影响

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摘要

The influence of surface roughness scattering on electron lowfield mobility in thin undoped GaAs-in-Al2O3 nanowires with rectangular cross-section is studied by means of the direct numerical solution of the Boltzmann transport equation at the electric quantum limit for different values of the nanowire cross-section dimensions, the nanowire temperature and the Fermi level in a one-dimensional electron gas. The formulae for calculation of surface roughness scattering matrix elements are derived in such a way that they contain the topological parameter D2D characterizing the surface roughness instead of the physical one, D1D, usually used.
机译：在电量子极限处，通过玻尔兹曼输运方程的直接数值解，研究了不同粗糙度的纳米线截面的表面粗糙度散射对矩形截面的无掺杂GaAs-in-Al2O3纳米线中电子低场迁移率的影响。截面尺寸，一维电子气中的纳米线温度和费米能级。以如下方式得出用于计算表面粗糙度散射矩阵元素的公式，即，它们包含表征表面粗糙度的拓扑参数D2D而不是通常使用的物理参数D1D。

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