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首页> 外文期刊>Physica status solidi, B. Basic research >Field-induced delocalization and Zener breakdown in semiconductor superlattices
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Field-induced delocalization and Zener breakdown in semiconductor superlattices

机译:半导体超晶格中的场致离域和齐纳击穿

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摘要

We investigate the electronic structure in strongly coupled superlattices over a wide field range. It is shown that the Wannier-Stark localization is followed by a field-induced delocalization which is due to a strong Zener coupling to continuum states. We compare different superlattice structures with high and with low barriers to alternatively investigate the effects of resonant interminiband tunneling and a strong Zener coupling to continuum states. The associated electrical breakdown is quantitatively shown in a detailed analysis of the absorption. A comprehensive theoretical model excellently describes the experimental results. Zener tunneling times are directly addressed by time-resolved experiments. [References: 8]
机译:我们研究了在宽场范围内强耦合超晶格中的电子结构。结果表明,Wannier-Stark定位之后是场诱导的离域,这是由于强烈的齐纳耦合到连续态所致。我们比较了具有高和低势垒的不同超晶格结构,以替代地研究共振微带隧穿和强齐纳耦合到连续态的影响。在吸收的详细分析中定量显示了相关的电击穿。全面的理论模型很好地描述了实验结果。齐纳隧穿时间可通过时间分辨实验直接解决。 [参考:8]

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