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首页> 外文期刊>Physica status solidi, B. Basic research >A quantum statistical model for graphene FETs on SiC
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A quantum statistical model for graphene FETs on SiC

机译：SiC上石墨烯FET的量子统计模型

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摘要

We present a quantum statistical model for nanoscale graphene field-effect transistors (FETs) on a SiC substrate. In the model, the scattering events as well as ballistic transport are taken into account. The channel charge and current are calculated with the Keldysh non-equilibrium Green's function technique. The model, which is meant for the design of the graphene FETs, is semianalytical, but it is easy to reduce the model to a simple fully analytical one, which then can be applied to the design of the integrated circuits made of graphene. It is shown that the neglect of the scattering would lead to too large values for the saturation current. The calculated transconductance and the on-off ratio for the saturation current are in agreement with the experimental results.
机译：我们为SiC衬底上的纳米级石墨烯场效应晶体管（FET）提供了一个量子统计模型。在模型中，考虑了散射事件以及弹道运输。使用Keldysh非平衡格林函数技术计算通道电荷和电流。用于石墨烯FET设计的模型是半分析模型，但是很容易将模型简化为简单的完全分析模型，然后可以将其应用于由石墨烯制成的集成电路的设计。结果表明，忽略散射会导致饱和电流值过大。计算出的跨导和饱和电流的通断比与实验结果一致。

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