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首页> 外文期刊>Physica status solidi, B. Basic research >Effects of planar geometry on the inhomogeneous broadening of zero-phonon lines of optical centers in diamond
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Effects of planar geometry on the inhomogeneous broadening of zero-phonon lines of optical centers in diamond

机译:平面几何形状对金刚石光学中心零声子线不均匀展宽的影响

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摘要

Optically active defects in diamond find a wide range of applications from lasers to single photon emitters essential for quantum communications. Ion implantation followed by thermal annealing is a mature technique used to create such defects. Implanted at a fixed energy, ions form a thin layer of optically active defects. Low temperature photoluminescence spectra of Xe-related defects in pure CVD diamond show peculiar behavior: the narrow zero-phonon line at 811.7nm changes its shape significantly with the increase of implantation dose from 1.1×10~(11) to 5×10~(12)ioncm~(-2). This work investigates the possible causes of this effect: planar geometry of the defects distribution and/or the complex defect structure.
机译:金刚石中的光学活性缺陷在从激光器到量子通信必不可少的单光子发射器中都有广泛的应用。离子注入后再进行热退火是用于产生此类缺陷的成熟技术。离子以固定的能量注入,形成光学活性缺陷的薄层。纯CVD金刚石中与Xe有关的缺陷的低温光致发光光谱表现出奇特的行为:随着注入剂量从1.1×10〜(11)增加到5×10〜(,在811.7nm处的窄零声子线形状明显改变。 12)ioncm〜(-2)。这项工作研究了这种影响的可能原因:缺陷分布的平面几何形状和/或复杂的缺陷结构。

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