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首页> 外文期刊>Physica status solidi, B. Basic research >Pressure effect on the anomalies of the electric and magnetic properties of diluted magnetic semiconductor CdGeAs2 doped with Mn
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Pressure effect on the anomalies of the electric and magnetic properties of diluted magnetic semiconductor CdGeAs2 doped with Mn

机译：压力对掺Mn的稀磁半导体CdGeAs2的电和磁性能异常的影响

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摘要

This paper presents the results of the high pressure (up to 7GPa) effect on the diluted magnetic semiconductor (DMS) CdGeAs_2: Mn with x=0.06-030. The normal R_0 and anomalous R_S portions of the Hall coefficients have been determined from the magnetic field dependencies of the Hall resistance. Pressure ranges related to the anomalies of the electric and magnetic properties have been found and studied. It has been shown that structural phase transitions are observed on the baric dependencies and their transition point shifts depending on the Mn content. The first- and second-order phase transitions (ferromagnetic-paramagnetic and paramagnetic-paramagnetic) have been identified on the magnetic susceptibility dependence in the pressure areas of P>1.3GPa and P≈4GPa which can be explained by occurrence of the second phase of MnAs in the basic structure of CdGeAs_2. Positive (PMR) and negative magnetoresistance (NMR) induced by high pressure also takes place in all the compounds studied.
机译：本文介绍了对x = 0.06-030的稀磁半导体（DMS）CdGeAs_2：Mn施加高压（高达7GPa）效果的结果。霍尔系数的正常R_0和异常R_S部分已根据霍尔电阻的磁场依赖性确定。已经发现和研究了与电和磁特性异常有关的压力范围。已经表明，在相依性上观察到结构相变，并且它们的转变点根据Mn含量变化。根据P> 1.3GPa和P≈4GPa压力区域的磁化率依赖性，已经确定了一阶和二阶相变（铁磁顺磁和顺磁顺磁），这可以通过出现第二相变来解释。 CdGeAs_2基本结构中的MnAs。在所有研究的化合物中，高压引起的正磁阻（PMR）和负磁阻（NMR）也会发生。

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