The photon energy dependence of the photoionization cross-section is calculated for a hydrogenic shallow donor impurity located in quantum-well wires of GaAs, surrounded by Ga_(1-x)Al_xAs as a function of the sizes of the wire for both infinite- and finite-well models. The results show that the photoionization cross-section depends on the polarization axis relative to the wire axis as well as on the quantum wire dimensions and the inhomogeneous confinement potential.
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