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首页> 外文期刊>Physica status solidi, B. Basic research >Comparison of the morphology and in distribution of capped and uncapped InGaN layers by transmission electron microscopy
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Comparison of the morphology and in distribution of capped and uncapped InGaN layers by transmission electron microscopy

机译:透射电子显微镜比较有盖和无盖InGaN层的形貌和分布

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摘要

We have compared and analysed the morphology of capped and uncapped thin InGaN layers by transmission electron microscopy, The samples were grown under the same conditions by metal-organic chemical vapour deposition. The capped layer appears to be homogenous in thickness whereas the uncapped one is characterized by the presence of large islands. Moreover, the In distribution was determined in both samples by quantitative high-resolution transmission electron microscopy. The average indium concentration was found to be comparable. Fluctuations of the In concentration on a large scale occur in both cases whereas fluctuations on a scale of a few nanometers are more pronounced in the capped layer. [References: 6]
机译:我们通过透射电子显微镜比较了覆盖的和未覆盖的InGaN薄层的形貌,并在相同条件下通过金属有机化学气相沉积法生长了样品。盖层的厚度似乎是均匀的,而未盖层的特征是存在大岛。此外,通过定量高分辨率透射电子显微镜测定了两个样品中的In分布。发现平均铟浓度是可比较的。在这两种情况下,In浓度均发生大规模波动,而在覆盖层中,几纳米级的波动更为明显。 [参考:6]

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