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首页> 外文期刊>Physica status solidi, B. Basic research >Highly efficient blue-ultraviolet photodetectors based on II-VI wide-bandgap compound semiconductors
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Highly efficient blue-ultraviolet photodetectors based on II-VI wide-bandgap compound semiconductors

机译：基于II-VI宽带隙化合物半导体的高效蓝紫外光电探测器

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摘要

II-VI ZnSe (binary) and ZnSSe (ternary) widegap compound semiconductor based photovoltaic devices (p-i-n and avalanche photodiodes (APDs)) are developed for the blue-violet (460400 nm) optical wavelength region by molecular beam epitaxial (MBE) growth. The ternary compound ZnSSe p-i-n structure photodiodes, grown with complete lattice matched condition on GaAs substrates, exhibit high external quantum efficiencies of 80-70% in the blue-violet optical region with extremely low dark currents (similar topA/mm(2)), These diodes reveal stable and long-lived operation at 300 K. Also presented is ZnSe and ZnSSe based blue-violet APD devices, fabricated by precise defect control and process techniques. This new device has revealed large signal gain (G) of G = 50 for ZnSe, and G = 60 for the ZnSSe APD device under high electric field strength of (0.8-1.1) x 10(6) V/cm. Important device parameters, ionization coefficients of photo-injected electrons and holes, and device stability are also discussed. [References: 8]
机译：II-VI ZnSe（二元）和ZnSSe（三元）宽带隙化合物半导体光伏器件（p-i-n和雪崩光电二极管（APDs））通过分子束外延（MBE）生长而开发用于蓝紫色（460400 nm）的光波长区域。在GaAs衬底上以完全晶格匹配的条件生长的三元化合物ZnSSe pin结构光电二极管在蓝紫色光学区域中表现出80-70％的高外部量子效率，且暗电流极低（类似于topA / mm（2）），这些二极管显示了在300 K下稳定且长期的工作状态。还介绍了基于ZnSe和ZnSSe的蓝紫色APD器件，这些器件是通过精确的缺陷控制和工艺技术制造的。这种新器件显示出在（0.8-1.1）x 10（6）V / cm的高电场强度下，ZnSe的大信号增益（G）为G = 50，而ZnSSe APD器件的G = 60。还讨论了重要的器件参数，光注入电子和空穴的电离系数以及器件稳定性。 [参考：8]

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