Optimization of pretreatment of GaP substrates for molecular beam epitaxy of ZnS-based materials

Ichino K.; Nishikawa T.; Kawakami F.; Kosugi T.; Kitagawa A.; Kobayashi H.

首页> 外文期刊>Physica status solidi, B. Basic research >Optimization of pretreatment of GaP substrates for molecular beam epitaxy of ZnS-based materials

【24h】

Optimization of pretreatment of GaP substrates for molecular beam epitaxy of ZnS-based materials

机译：GaP衬底预处理对ZnS基材料分子束外延的优化

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have investigated pretreatment conditions of GaP substrates for molecular beam epitaxy of ZnS-based materials. Oxide removal of GaP substrates was carried out with or without irradiation of P or/and Zn molecular beams under S-free environment. The effects of the beam irradiation and the growth temperature on the initial growth mode and crystalline quality of ZnS epitaxial layers were studied. It was shown that the ZnS epitaxial layers grown on the P- and Zn-irradiated substrates at the growth temperatures of 350-450 degreesC show quasi-two-dimensional nucleation and good crystalline quality. [References: 10]

机译：我们研究了ZnS基材料分子束外延的GaP衬底的预处理条件。在无S环境下，在有或没有P或/和Zn分子束辐照的情况下，对GaP衬底进行氧化物去除。研究了束辐照和生长温度对ZnS外延层初始生长模式和晶体质量的影响。结果表明，在350-450℃的生长温度下，在P和Zn辐照的衬底上生长的ZnS外延层表现出准二维成核和良好的结晶质量。 [参考：10]

著录项

来源
《Physica status solidi, B. Basic research》 |2002年第1期|共4页
作者
Ichino K.; Nishikawa T.; Kawakami F.; Kosugi T.; Kitagawa A.; Kobayashi H.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Optimization of pretreatment of GaP substrates for molecular beam epitaxy of ZnS-based materials [J] . Ichino K., Nishikawa T., Kawakami F., Physica status solidi, B. Basic research . 2002,第1期

机译：GaP衬底预处理对ZnS基材料分子束外延的优化
2. GaPN-GaP double heterostructure light emitting diode grown on GaP substrate by solid-source molecular beam epitaxy [J] . S. Y. Moon, A. Utsumi, H. Yonezu, Physica Status Solidi. C, Conferences and critical reviews . 2004,第10期

机译：固源分子束外延在GaP衬底上生长的GaPN-GaP双异质结构发光二极管
3. GaPN-GaP double heterostructure light emitting diode grown on GaP substrate by solid-source molecular beam epitaxy [J] . Moon SY, Utsumi A, Yonezu H, Physica Status Solidi. A, Applied Research . 2004,第12期

机译：固源分子束外延在GaP衬底上生长的GaPN-GaP双异质结构发光二极管
4. GaPN-GaP double heterostructure light emitting diode grown on GaP substrate by solid-source molecular beam epitaxy [C] . S. Y. Moon, A. Utsumi, H. Yonezu, International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：通过固体源分子束外延在间隙基板上生长的Gapn-Gap双异质结构发光二极管
5. Molecular beam epitaxy growth and characterization of wide bandgap zinc-magnesium-selenium semiconductor materials and heterostructures for intersubband devices. [D] . Sohel, Mohammad A. 2005

机译：子带外延生长和宽带隙锌-镁-硒半导体材料及其子结构的异质结构的表征。
6. Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy [O] . Byoung Ki Choi, Minu Kim, Kwang-Hwan Jung, 2017

机译：分子束外延生长的MoSe2带隙的温度依赖性
7. Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy [O] . Cheng-Wei Liu, Jin-Ji Dai, Ssu-Kuan Wu, 2020

机译：分子束外延生长的2D层状Gase材料中的基材诱导的菌株
8. Optimization of Buffer Layers for InGaAs/AlGaAs PIN Optical Modulators Grown on GaAs Substrates by Molecular Beam Epitaxy [R] . Katzer, D. S. , Rabinovich, W. S. , Ikossi-Anastasiou, K. , 2000

机译：通过分子束外延在Gaas衬底上生长的InGaas / alGaas pIN光调制器的缓冲层优化

Optimization of pretreatment of GaP substrates for molecular beam epitaxy of ZnS-based materials

摘要

著录项

相似文献

相关主题

期刊订阅