...
首页> 外文期刊>Physica status solidi, B. Basic research >Covalent bridges - an induced modification of the conduction band in layered crystals
【24h】

Covalent bridges - an induced modification of the conduction band in layered crystals

机译:共价桥-层状晶体中导带的诱导修饰

获取原文
获取原文并翻译 | 示例
           

摘要

A cross-rearrangement of the conduction band of a layered crystal intercalated with dopant atoms which create covalent bridges is discussed. The dispersion laws (including analytical ones) of splitted subbands of the conduction band and the following rearrangement parameters have been found: characteristic concentration, width of the gap between subbands, and the energy value of the shift of the lower subband with respect to the initial position of the conduction band. The energy position of the resonant level versus parameters of the chosen model has been obtained and the conditions for this level to arise as well as its concentrational broadening were analysed. Changes of the anisotropy of the effective masses in extrema of the created subbands have been revealed. The results of investigations are in a good agreement with experimental data concerning layered In4Se3 crystals doped by copper. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译:讨论了插入有共价桥的掺杂剂原子的层状晶体的导带的交叉重排。已发现导带分裂子带的色散定律(包括分析定律)和以下重排参数:特征集中,子带之间的间隙宽度以及较低子带相对于初始位移的能量值导带的位置。已经获得了共振能级相对于所选模型参数的能量位置,并且分析了该能级产生的条件及其浓度展宽。已经揭示了所创建子带的极值中有效质量各向异性的变化。研究结果与关于铜掺杂的In4Se3层状晶体的实验数据非常吻合。 (C)2004 WILEY-VCH Verlag GmbH&Co. KGaA,Weinheim。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号