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首页> 外文期刊>Physica status solidi, B. Basic research >Appearance of copper d(9) defect centres in wide-gap CdSe nanoparticles: A high-frequency EPR study
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Appearance of copper d(9) defect centres in wide-gap CdSe nanoparticles: A high-frequency EPR study

机译：宽间隙CdSe纳米颗粒中d（9）铜缺陷中心的出现：高频EPR研究

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摘要

When preparing CdSe nanoparticles in polybutadiene-based polymer matrices, quantum confinement in the smaller particles leads to the usual increase in the band-gap energy, with associated, well defined, band-edge luminescence emission. However, for samples whose size is smaller than 3nm, new broad luminescence features appear, with the simultaneous appearance of a new paramagnetic defect centre that has not previously been reported in the literature. This work concentrates on analyzing the electron paramagnetic resonance of the new defect, which is found to be located at a trigonally-distorted tetrahedral site, with a spin S = 1/2 and g-values g(parallel to) = 2.321 +/- 0.006 and g(perpendicular to) = 2.053 +/- 0.006. With the attribution of very poorly resolved hyperfine interaction to a nucleus of spin I = 3/2, the identity of the defect is ascribed to copper in its d(9) state, which would be expected to act as a simple acceptor centre in CdSe. Conclusions are drawn to the effect that the defect normally resides within the valence band for bulk and large particles, only becoming apparent as a defect within the band-gap as the energy increases above 2.6 eV in the smaller particles.
机译：当在基于聚丁二烯的聚合物基质中制备CdSe纳米颗粒时，较小颗粒中的量子限制会导致带隙能量的通常增加，并伴有明确定义的带边发光。但是，对于尺寸小于3nm的样品，会出现新的宽泛发光特征，同时出现了新的顺磁缺陷中心，而以前在文献中没有报道过。这项工作集中于分析新缺陷的电子顺磁共振，发现该新缺陷位于三角扭曲的四面体位置，自旋S = 1/2，g值g（平行）= 2.321 +/- 0.006和g（垂直于）= 2.053 +/- 0.006。归因于极微弱相互作用的极弱相互作用归因于自旋I = 3/2的原子核，缺陷的身份归因于处于d（9）状态的铜，有望在CdSe中充当铜的简单受体中心。得出的结论是，缺陷通常位于大块和大颗粒的价带内，当能量增加到2.6 eV以上时，在较小的颗粒中，带隙中的缺陷才变得明显。

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