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首页> 外文期刊>Physica status solidi, B. Basic research >Confined and interface polar optical phonon-limited electron mobility in quantum wires
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Confined and interface polar optical phonon-limited electron mobility in quantum wires

机译：量子线中受限和界面极性光子限制了声子的电子迁移率

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摘要

The electron mobility conditioned by confined and interface polar optical phonons for a quasi-one-dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low-field electron mobility in the quantum wire. Taking into account the inelasticity of the electron-polar optical phonon interaction, the electron mobility is derived by a method that was successfully applied in three- and quasi-two-dimensional cases. The contribution of intersubband transitions to electron mobility for the GaAs quantum wire embedded in the AlxGa1-xAs medium is estimated. The extremums of the mobility dependences on wire radius and Al concentration are obtained.
机译：解析地研究了嵌入在介电介质中的准一维圆柱量子线的受限和界面极性光子对电子迁移率的影响。结果表明，包含极性光学声子限制效应对于精确计算量子线中的低场电子迁移率至关重要。考虑到电子-极性光学声子相互作用的非弹性，电子迁移率是通过在3维和准2维情况下成功应用的方法得出的。估算了嵌入在AlxGa1-xAs介质中的GaAs量子线的子带间跃迁对电子迁移率的贡献。得到了迁移率的极值与线径和铝浓度的关系。

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