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首页> 外文期刊>Physica status solidi, B. Basic research >HgGa2Se4 under high pressure: An optical absorption study
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HgGa2Se4 under high pressure: An optical absorption study

机译：高压下的HgGa2Se4：光吸收研究

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摘要

High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order-disorder processes that occur in this ordered-vacancy compound. Two different experiments have been carried out in which the sample undergoes either a partial or a total pressure-induced disorder process at 15.4 and 30.8GPa, respectively. It has been found that the direct bandgap energies of the recovered samples at 1GPa were around 0.15 and 0.23eV smaller than that of the original sample, respectively, and that both recovered samples have different pressure coefficients of the direct bandgap than the original sample. A comprehensive explanation for these results on the basis of pressure-induced order-disorder processes is provided.
机译：已在缺陷黄铜矿HgGa2Se4中进行了高压光吸收测量，以研究压力对带隙能量的影响及其与在该有序空位化合物中发生的压力诱导的有序无序过程的关系。已经进行了两个不同的实验，其中样品分别在15.4和30.8GPa处经历了部分或全部压力引起的紊乱过程。已经发现，在1GPa下回收的样品的直接带隙能量分别比原始样品小约0.15和0.23eV，并且两个回收的样品具有与原始样品不同的直接带隙的压力系数。提供了基于压力引起的有序-无序过程的这些结果的全面解释。

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