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首页> 外文期刊>Physica status solidi, B. Basic research >Growth of Bi2Se3 and Bi2Te3 on amorphous fused silica by MBE
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Growth of Bi2Se3 and Bi2Te3 on amorphous fused silica by MBE

机译：MBE在非晶态熔融石英上生长Bi2Se3和Bi2Te3

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Topological insulator (TI) thin films of Bi2Se3 and Bi2Te3 have been successfully grown on amorphous fused silica (vitreous SiO2) substrates by molecular beam epitaxy. We find that such growth is possible and investigations by X-ray diffraction reveal good crystalline quality with a high degree of order along the c-axis. Atomic force microscopy, electron backscatter diffraction and X-ray reflectivity are used to study the surface morphology and structural film parameters. Angle-resolved photoemission spectroscopy studies confirm the existence of a topological surface state. This work shows that TI films can be grown on amorphous substrates, while maintaining the topological surface state despite the lack of in-plane rotational order of the domains. The growth on fused silica presents a promising route to detailed thermoelectric measurements of TI films, free from unwanted thermal, electrical, and piezoelectric influences from the substrate. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机译：Bi2Se3和Bi2Te3的拓扑绝缘体（TI）薄膜已通过分子束外延成功地生长在非晶态熔融石英（玻璃质SiO2）衬底上。我们发现这种生长是可能的，并且通过X射线衍射进行的研究显示出良好的晶体质量，沿c轴有序度高。原子力显微镜，电子背散射衍射和X射线反射率用于研究表面形态和结构膜参数。角度分辨光发射光谱学研究证实了拓扑表面状态的存在。这项工作表明，TI薄膜可以在非晶衬底上生长，同时尽管缺乏畴的平面内旋转顺序，但仍可以保持拓扑表面状态。熔融石英的生长为TI膜的详细热电测量提供了一条有希望的途径，该方法不受基材的有害热，电和压电影响。 （C）2015 WILEY-VCH Verlag GmbH＆Co.KGaA，Weinheim

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