LINEAR POLARIZATION OF PHOTOLUMINESCENCE AND RAMAN SCATTERING IN OPEN INGAAS/INP QUANTUM WELL WIRES

Gippius NA.; Rubio J.; Calleja JM.; Ils P.; Forchel A. Kulakovskii VD.; Tikhodeev SG.

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LINEAR POLARIZATION OF PHOTOLUMINESCENCE AND RAMAN SCATTERING IN OPEN INGAAS/INP QUANTUM WELL WIRES

机译：开口INGAAS / INQ量子阱中光致发光的线性极化和拉曼散射

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The photoluminescence and Raman scattering intensities of InGaAs/InP quantum well wires with wire widths L(x) between 10 nm and 1 mu m are strongly polarized parallel to the wire axis. This effect is mainly due to the spatial redistribution of the electric component of the electromagnetic field in the vicinity of the quantum wire. [References: 5]

机译：线宽L（x）在10 nm和1μm之间的InGaAs / InP量子阱线的光致发光和拉曼散射强度与线轴平行强偏振。该影响主要是由于量子线附近的电磁场的电分量在空间上的重新分布。 [参考：5]

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《Physica status solidi, B. Basic research》 |1995年第1期|共5页
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Gippius NA.; Rubio J.; Calleja JM.; Ils P.; Forchel A. Kulakovskii VD.; Tikhodeev SG.;
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中图分类固体物理学;
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1. LINEAR POLARIZATION OF PHOTOLUMINESCENCE AND RAMAN SCATTERING IN OPEN INGAAS/INP QUANTUM WELL WIRES [J] . Gippius NA., Rubio J., Calleja JM., Physica status solidi, B. Basic research . 1995,第1期

机译：开口INGAAS / INQ量子阱中光致发光的线性极化和拉曼散射
2. Time-resolved photoluminescence and Raman scattering of InAsSb/InP quantum dots [J] . Saulius Marcinkevicius, Yueming Qiu, Rosa Leon, Applied Physics Letters . 2005,第18期

机译：InAsSb / InP量子点的时间分辨光致发光和拉曼散射
3. Temperature-controlled Symmetry of Linear Polarization of Photoluminescence from InGaAs-Buried InAs/GaAs Quantum Dots [J] . Kohki Mukai, Kousuke Kikushima, Tomoya Tanaka, Japanese journal of applied physics . 2013,第6issue2期

机译：InGaAs埋入的InAs / GaAs量子点的光致发光线性极化的温度控制对称性
4. Comparison of polarization effects of excitataion light source on photoluminescence spectrum for InGaAsP/InP quantum well structures [C] . Hajime Imai, Yuko Saito, Asako Motomura International Conference on Indium Phosphide Related Materials . 2008

机译：EccitataIn光源对InGaAsp / InP量子阱结构的光致发光光谱的偏振效应的比较
5. Power and spectral characterization of InGaAsP-InP multi-quantum well lasers [D] . Prosyk, Kelvin. 1998

机译：InGaASP-INP多量子孔激光器的功率和光谱表征
6. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness [O] . Ying Wang, Xinzhi Sheng, Qinglin Guo, 2017

机译：不同厚度InGaAs / InAlAs / InP单量子阱界面涨落效应的光致发光研究
7. Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP/InP [O] . Zhou, D Dayong, Nötzel, R Richard, Otten, van, FWM Frank, 2006

机译：InGaAsP / InP中堆叠的InGaAs侧壁量子线的光学特性
8. Raman Scattering of a Slab-Mode Phonons in InGaAsP/InP Multiple Quantum Wells [R] . Lazzouni, M., Nelson, D. F., Logan, R. A., 1991

机译：InGaasp / Inp多量子阱中平板模式声子的拉曼散射

LINEAR POLARIZATION OF PHOTOLUMINESCENCE AND RAMAN SCATTERING IN OPEN INGAAS/INP QUANTUM WELL WIRES

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