Symmetry of electron states and optical transitions in GaN/AIN hexagonal quantum dots

Tronc P; Smirnov VP; Zhuravlec KS

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Symmetry of electron states and optical transitions in GaN/AIN hexagonal quantum dots

机译：GaN / AIN六角形量子点中电子态和光学跃迁的对称性

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The exact symmetry of hexagonal quantum dots (QDs) made of materials with the wurtzite structure such as GaN/AlN QDs for example, is described by the C-3v point group and does not depend on the existence of a wetting layer. We have determined the possible exact symmetries of electron states and vibration modes in the dots and derived the optical selection rules. The vibration modes involved in the Frolich interaction are totally symmetric with respect to the C-3v group and can induce transitions only between states with the same symmetry. The not totally symmetric modes provide other channels for lowering the energy of excited carriers and excitons by connecting states with symmetries different one from another. The rapid decay of created polarons, due to the short lifetime of vibration modes, releases the carriers and excitons into ground levels. In the envelope function approximation (EFA), the symmetry of the dots is represented by the C-6v point group. Interband transitions are allowed only between states whose envelope functions have the same symmetry. EFA artificially increases the number of dark exciton symmetries. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：由具有纤锌矿结构的材料（例如GaN / AlN QD）制成的六角形量子点（QD）的精确对称性由C-3v点组描述，并且不依赖于润湿层的存在。我们确定了点中电子状态和振动模式的可能精确对称性，并得出了光学选择规则。弗洛里奇相互作用中涉及的振动模式相对于C-3v组是完全对称的，并且只能引起具有相同对称性的状态之间的跃迁。不完全对称的模式通过连接状态彼此不同的对称性提供了其他通道，以降低激发的载流子和激子的能量。由于振动模式寿命短，所产生的极化子迅速衰减，从而将载流子和激子释放到地平面中。在包络函数近似（EFA）中，点的对称性由C-6v点组表示。仅在包络函数具有相同对称性的状态之间才允许带间转换。 EFA人为地增加了暗激子对称性的数量。（C）2004 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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《Physica status solidi, B. Basic research》 |2004年第13期|共10页
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Tronc P; Smirnov VP; Zhuravlec KS;
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中图分类固体物理学;
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机译：Gan;

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专利

1. Symmetry of electron states and optical transitions in GaN/AIN hexagonal quantum dots [J] . Tronc P, Smirnov VP, Zhuravlec KS Physica status solidi, B. Basic research . 2004,第13期

机译：GaN / AIN六角形量子点中电子态和光学跃迁的对称性
2. POLARON STATES OF AN ELECTRON IN A DOUBLE NANOSCALE HETEROSTRUCTURE OF HEXAGONAL SYMMETRY CRYSTALS(ON THE BASIS OF AIN/GaN/AIN) [J] . V.I.Bochuk, V.A.Borusevych, I.V.Bilysky Journal of physical studies . 2008,第2期

机译：六角对称晶体的双纳米异质结构中电子的极化态（基于AIN / GaN / AIN）
3. Symmetry based calculation of electronic structure and intra-band absorption in GaN/AlN hexagonal quantum dot superlat-tices [J] . Nenad Vukmirovic, Zoran Ikonic, Dragan Indjin, Physica Status Solidi. C, Conferences and critical reviews . 2006,第11期

机译：GaN / AlN六角形量子点超晶格中基于对称性的电子结构和带内吸收的计算
4. Optical properties of GaN/AIN quantum dots under intense laser field [C] . Lu Zhang, Zhongyuan Yu, Wenjie Yao, Optoelectronic materials and devices VI . 2011

机译：GaN / AIN量子点在强激光场下的光学性质
5. Optical transitions and dynamic properties of GaN wide bandgap semiconductors and quantum wells [D] . Smith, Matthew Ryan 1997

机译：GaN宽带隙半导体和量子阱的光学过渡和动态特性
6. Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure [O] . Jiadong Yu, Lai Wang, Di Yang, -1

机译：InGaN / GaN量子阱和量子点结构耦合中的自旋和光偏振研究
7. Symmetries and optical transitions of hexagonal quantum dots in GaAs/AlGaAs nanowires [O] . Svendsen, Guro K., Skaar, Johannes, Weman, Helge, 2013

机译：六角形量子点的对称性和光学跃迁 Gaas / alGaas纳米线
8. Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices [R] . Petroff, P. M. 2003

机译：用于量子点器件室温操作的GaN / alN自组装量子点的研制

Symmetry of electron states and optical transitions in GaN/AIN hexagonal quantum dots

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