Binding energies of excitons in II-VI compound-semiconductor based quantum well structures

Senger RT; Bajaj KK

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Binding energies of excitons in II-VI compound-semiconductor based quantum well structures

机译：基于II-VI化合物半导体的量子阱结构中激子的结合能

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We present a brief description of the calculation of the variation of the binding energy of the heavy-hole exciton as a function of well width in quantum well structures composed of II-VI compound semiconductors including the effects of exciton-optical phonon interaction as formulated by Pollmann and Buttner [J. Pollmann and H. Buttner, Phys. Rev. B 16, 4480 (1977)], and of particle masses and dielectric mismatches between the well and the barrier layers. We compare the results of our calculations with the available experimental data in ZnSe/MgS, ZnSe/Mg0.15Zn0.85Se, and ZnS/Mg0.19Zn0.81S quantum well structures and find a good agreement. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：我们对由II-VI化合物半导体组成的量子阱结构中重空穴激子的结合能随阱宽度的变化的计算进行简要描述，包括由下式表示的激子-光子声子相互作用的影响： Pollmann和Buttner [J. Pollmann和H.Buttner，物理学。 Rev.B 16，4480（1977）]，以及阱和势垒层之间的粒子质量和介电失配。我们将计算结果与ZnSe / MgS，ZnSe / Mg0.15Zn0.85Se和ZnS / Mg0.19Zn0.81S量子阱结构中的可用实验数据进行比较，并找到了良好的一致性。（C）2004 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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《Physica status solidi, B. Basic research》 |2004年第8期|共5页
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Senger RT; Bajaj KK;
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1. Binding energies of excitons in II-VI compound-semiconductor based quantum well structures [J] . Senger RT, Bajaj KK Physica status solidi, B. Basic research . 2004,第8期

机译：基于II-VI化合物半导体的量子阱结构中激子的结合能
2. ANALYTICAL PERTURBATION DERIVATION OF THE EXCITON BINDING ENERGY IN GENERALIZED INFINITE QUANTUM WELLS - APPLICATION TO TYPE-I AND -II FINITE-QUANTUM-WELL STRUCTURES [J] . Debarge G., Toledoalvarez A., Erasme D. Physical Review, B. Condensed Matter . 1996,第7期

机译：广义无限量子阱中激子束缚能的解析扰动导数-在I型和II型有限量子阱结构中的应用
3. Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons in GaAs-based quantum wells [J] . A. V. Filinov, C. Riva, F. M. Peeters, Physical review. B, Condensed Matter And Materals Physics . 2004,第3期

机译：阱宽波动对基于GaAs的量子阱中激子，带电激子和双激子结合能的影响
4. Creating excitons in II-VI quantum wells with large binding energies [C] . B. Urbaszek, C. Morhain, C. Bradford, Conference on Optoelectronic and Microelectronic Materials and Devices . 2000

机译：在II-VI量子孔中创造激子，具有大的绑定能量
5. Magneto-optical investigations of II-VI DMS heterostructures: zinc(1-x-y) manganese(x) cadmium(y) selenium/zinc(1-x) manganese(x) selenium single quantum wells, zinc(1-x) cadmium(x) selenium/zinc(1-y) manganese(y) selenium type-I and cadmium selenide/zinc telluride based type-II superlattices. [D] . Zhang, Fu-Cai. 1994

机译：II-VI DMS异质结构的磁光研究：锌（1-xy）锰（x）镉（y）硒/锌（1-x）锰（x）硒单量子阱，锌（1-x）镉（ x）硒/锌（1-y）锰（y）硒I型和硒化镉/碲化锌的II型超晶格。
6. Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak [O] . Sandeep Sankaranarayanan, Shonal Chouksey, Pratim Saha, -1

机译：从量子限制和激子结合能相关的光致发光峰确定InGaN / GaN纳米壁中的应变弛豫
7. Binding energies of excitons in II-VI compound-semiconductor based quantum well structures [O] . Senger, R.T., Bajaj, K.K. 2004

机译：基于II-VI化合物半导体的量子阱结构中激子的结合能

Binding energies of excitons in II-VI compound-semiconductor based quantum well structures

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