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首页> 外文期刊>Physica status solidi, B. Basic research >Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire
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Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire

机译：蓝宝石上未掺杂和掺杂Si的GaN膜的红外反射率研究

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摘要

Undoped and Si-doped GaN films grown on sapphire were investigated by infrared reflectance spectroscopy. The carrier concentrations were determined from theoretical simulation fitting to the reststrahlen band, which are in agreement with Hall measurements. A damping behavior of the interference fringe contrast was observed, which can be well explained by the effect of an interface layer. Such interface layer was proposed to be due to the high density of defects near the GaN-substrate interface. As the doping level increases, this contrast damping is weakened, accompanying with the lowering of reflectivity in the higher frequency region. Combined with the atomic force microscopy analysis, an improvement of the interface quality, due to the Si-doping, is demonstrated.
机译：通过红外反射光谱研究了在蓝宝石上生长的未掺杂和硅掺杂的GaN膜。通过理论模拟拟合到reststrahlen带确定载流子浓度，这与霍尔测量结果一致。观察到干涉条纹对比的阻尼行为，这可以通过界面层的作用很好地解释。提出这样的界面层是由于GaN-衬底界面附近的缺陷的高密度。随着掺杂水平的增加，对比度衰减减弱，伴随着较高频率区域中反射率的降低。结合原子力显微镜分析，证明了由于Si掺杂导致界面质量的提高。

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