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首页> 外文期刊>Physica status solidi, B. Basic research >Thermoelectric power and Hall effect measurements in polycrystalline CdTe thin films
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Thermoelectric power and Hall effect measurements in polycrystalline CdTe thin films

机译:多晶CdTe薄膜中的热电功率和霍尔效应测量

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Polycrystalline CdTe thin films deposited by Close Space Sublimation (CSS), were characterized through thermoelectric power, alpha, Hall coefficient, and resistivity, Q, measurements in the range of 90 to 400 K. This was in order to determine the scattering mechanisms which mainly affect the electrical transport properties in CdTe thin films. The results were analyzed based on theoretical calculations of a against temperature. This model includes scattering processes within the grains and at the grain boundaries. Some of the parameters used in this calculation were determined experimentally: grain size, crystal structure, activation energy and effective mass. It is important to state that the main approximations were justified according to experimental measurements. [References: 8]
机译:通过热电功率α,霍尔系数和电阻率Q在90至400 K范围内进行测量,对通过密闭空间升华(CSS)沉积的多晶CdTe薄膜进行了表征。这主要是为了确定散射机理,主要是影响CdTe薄膜的电传输性能。基于对温度的理论计算来分析结果。该模型包括晶粒内和晶界处的散射过程。此实验中使用的一些参数是通过实验确定的:晶粒尺寸,晶体结构,活化能和有效质量。重要的是要说明主要近似值是根据实验测量得出的。 [参考:8]

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