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A possible role of the D- band in hopping conductivity and metal-insulator transition in 2D structures

机译:D波段在2D结构中跃迁电导率和金属-绝缘体跃迁中的可能作用

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摘要

It is demonstrated that the upper Hubbard band (UHB) can play an important role in the hopping conductivity; 2D geometry and vicinity of the metal-insulator transition emphasize this role. A simple model for the recently observed metal-insulator transition is suggested. The model starts from the insulating limit and implies a principal role of the UHB. It gives a qualitative explanation for most of the features of the transition. The quantitative analysis of MR in the strongly insulating limit leads to values of g-factors in good agreement with the known values. [References: 23]
机译:结果表明,上哈伯德带(UHB)在跳变电导率中起着重要作用。 2D几何形状和金属-绝缘体过渡附近强调了此作用。建议了一个用于最近观察到的金属-绝缘体转变的简单模型。该模型从绝缘极限开始,并暗示了UHB的主要作用。它为过渡的大多数功能提供了定性的解释。在强绝缘极限内对MR进行定量分析,得出的g因子值与已知值非常吻合。 [参考:23]

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