Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains

Shubina TV.; Jmerik VN.; Tkachman MG.; Vekshin VA.; Ratnikov VV.; Toropov AA.; Sitnikova AA.; Ivanov SV.; Bergman JP.; Karlsson F.; Holtz P. Monemar B.

首页> 外文期刊>Physica status solidi, B. Basic research >Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains

【24h】

Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains

机译：具有反转域的GaN / AlGaN量子阱中本征电场的纳米尺度涨落

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Strain and electric field fluctuations in regions of different polarities in GaN/AlGaN quantum well (QW) structures of dominant N-polarity with inversion domains (IDs) split the photoluminescence (PL) emission into two bands. Micro-PL and time-resolved PL studies reveal strong inhomogeneity of the array of the IDs, where essential parameters, such as strain, electric fields, and sizes are fluctuating quantities. We demonstrate also that the ID formation decreases the intrinsic electric field magnitudes. [References: 7]

机译：带有反转域（ID）的具有优势N极性的GaN / AlGaN量子阱（QW）结构中不同极性区域的应变和电场波动将光致发光（PL）发射分为两个波段。 Micro-PL和时间分辨的PL研究表明ID阵列具有很强的不均匀性，其中诸如应变，电场和尺寸等基本参数正在波动。我们还证明了ID的形成会降低固有电场强度。 [参考：7]

著录项

来源
《Physica status solidi, B. Basic research》 |2002年第3期|共5页
作者
Shubina TV.; Jmerik VN.; Tkachman MG.; Vekshin VA.; Ratnikov VV.; Toropov AA.; Sitnikova AA.; Ivanov SV.; Bergman JP.; Karlsson F.; Holtz P. Monemar B.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
Polarization; Gan;

机译：polarization;Gan;

相似文献

外文文献
中文文献
专利

1. Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains [J] . Shubina TV., Jmerik VN., Tkachman MG., Physica status solidi, B. Basic research . 2002,第3期

机译：具有反转域的GaN / AlGaN量子阱中本征电场的纳米尺度涨落
2. Electric fields in AlGaN/GaN quantum well structures [J] . McAleese C, Costa PMFJ, Graham DM, Physica status solidi, B. Basic research . 2006,第7期

机译：AlGaN / GaN量子阱结构中的电场
3. Effects of external electric field and Al content on g factor of wurtzite AlGaN/GaN quantum wells [J] . Li Ming, Yao Ning, Feng Zhi-Bo, Fortschritte der Physik . 2018,第5期

机译：外部电场和Al含量对诸如Thangerapl / GaN量子井G系数的影响
4. EFFECTS OF PIEZOELECTRIC FIELDS IN GaInN/GaN AND GaN/AlGaN HETEROSTRUCTURES AND QUANTUM WELLS [C] . Symposium on nitride semiconductors . 1998

机译：压电场在Gainn / GaN和GaN / AlGaN异质结构和量子阱中的影响
5. AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability [D] . Azam, Faisal. 2018

机译：Algan / GaN Moshfet使用ALD电介质：性能和可靠性研究
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains [O] . Bigenwald, Pierre, Monemar, B, Shubina, T. V., 2003

机译：具有反转域的N极性GaN / AlxGa1-xN量子阱中的本征电场
8. Piezoelectric Field Enhanced Second-Order Nonlinear Optical Susceptibilities in Wurtzite GaN/AlGaN Quantum Wells [R] . Liu, Ansheng, Chuang, S.-L., Ning, C. Z. 1999

机译：纤锌矿GaN / alGaN量子阱中压电场增强的二阶非线性光学敏感性

Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains

摘要

著录项

相似文献

相关主题

期刊订阅